SHIRAISHI Kenji | NTT Basic Research Laboratories

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概要

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著作論文

First-principles Study on the Stable Molecular Structures of Peptide Nanotubes
Carbon in III-V Compounds: A Theoretical Approach
Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
Interfacial Silicon Emission in Dry Oxidation -the Effect of H and Cl
Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model : Semiconductors
The Effect of Chlorine on Silicon Oxidation : Simulation based on the Interfacial Silicon Emission Model
Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands
Oxidation Simulation of (111) and (100) Silicon Substrates Based on the Interfacial Silicon Emission Model
Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model
Unified Simulation of Silicon Oxidation Based on the Interfacial Silicon Emission Model
Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission
Ferromagnetism in Semiconductor Dot Array
Phenomenological Theory of Semiconductor Epitaxial Growth with Misfit-Dislocations
A Theoretical Investigation of the Potential for Infer-Surface Migration of Ga Adatoms between GaAs(001) and (111)B Surfaces
A Method for Calculating Momentum Matrix Elements with Pseudopotentials
Universal Theory of Si Oxidation Rate Taking Account of Interfacial Si Emission
First-Principles Study of the Oxide Growth Process on Silicon Surfaces and at Silicon-Oxide/Silicon Interfaces
Stable Microstructures on a GaAs(111)A Surface : the Smallest Unit for Epitaxial Growth
Reflectance Difference Spectra Calculations of GaAs(001) As- and Ga-rich Reconstruction Surface Structures
Electric Field Induced Recombination Centers in GaAs
Theoretical Investigation of the Adsorption Behavior of Si Adatoms on GaAs (001)-(2×4) Surfaces
Electron Counting Monte Carlo Simulation of the Structural Change of the GaAs(001)-c (4×4) Surface during Ga Predeposition
A Theoretical Inverstigation of Stable Lattice Sites for In Adatoms on GaAs(001)-(2×4) Surface
Theoretical Investigations of Adsorption Behavior on GaAs(001) Surfaces
Valence Band Offsets of the In_xGa_As/GaAs Strained-Layer Superlattice
First Principle Calculation of the DX-Center Ground-States in GaAs,Al_xGa_As Alloys and AlAs/GaAs Superlattices
Theoretical Studies on Electronic Structures of Polypeptide Chains
A Theoretical Investigation of Migration Potentials of Ga Adatorms near Step Edges on GaAs(001)-c(4 × 4) Surface
A New Slab Model Approach for Electronic Structure Calculation of Polar Semiconductor Surface
First-Principles Study on Electronic Structures of Protein Nanotubes
Electronic Structures of Protein Nanotubes
A Theoretical Investigation of Migration Potentials of Ga Adatoms near Kink and Step Edges on GaAs(001)-(2×4) Surface
The Effect of Chlorine on Silicon Oxidation: Simulation based on the Interfacial Silicon Emission Model

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