Uematsu Masaya | NTT Basic Research Laboratories, NTT Corporation

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著作論文

Fabrication of 0.1 μm Patterns Using an Alternating Phase Shift Mask in ArF Excimer Laser Lithography
Fabrication of 0.13-μm Device Patterns by Argon Fluoride Excimer Laser Lithography with Practical Resolution Enhancement Techniques
Identification of Vacancy-Type Defects in Molecular Beam Epitaxy-Grown GaAs Using a Slow Positron Beam
Interfacial Silicon Emission in Dry Oxidation-the Effect of H and Cl
Interfacial Silicon Emission in Dry Oxidation -the Effect of H and Cl
Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands
Oxidation Simulation of (111) and (100) Silicon Substrates Based on the Interfacial Silicon Emission Model
Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model
Simulation of Boron Diffusion in High-Dose BF_2 Implanted Silicon

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