Maezawa Koichi | Ntt Lsi Laboratories

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概要

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著作論文

Identification of Vacancy-Type Defects in Molecular Beam Epitaxy-Grown GaAs Using a Slow Positron Beam
Monostable-Bistable Transition Logic Elements (MOBILEs) Based on Monolithic Integration of Resonant Tunneling Diodes and FETs
Device Technology for Monolithic Integration of InP-Based Resonant Tunneling Diodes and HEMTs (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
InP-Based High-Performance Monostable-Bistable Transistion Logic Element (MOBILE):an Intelligent Logic Gate Featuring Weighted-Sum Threshold Operations
InP-Based High-Performance Monostable-Bistable Transition Logic elements (MOBILEs) Using Resonant-Tunneling Devices
Threshold Logic Function on Both Positive and Negative Weighted Sums in Multiple-Input Monostable-Bistable Transition Logic Elements
Monte Carlo Study of Charge Injection Transistors (CHINTs)
Resonant Tunneling in a Novel Coupled-Quantum-Well Base Transistor
Compensation Mechanism in Heavily Si-Doped GaAs Grown by MBE
Characterization of Lattice Sites and Compensation Mechanism in Heavily Si-Doped GaAs with Laser Raman Spectroscopy
Operation Speed Consideration of Resonant Tunneling Logic Gate Based on Circuit Simulation (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Monte Carlo Simulation of Response Time for Velocity Modulation Transistors
A New Resonant Tunneling Logic Gate Employing Monostable-Bistable Transition
High-Frequency Characteristics of Charge-Injection Transistor-Mode Operation in AlGaAs/InGaAs/GaAs Metal-Insulator-Semiconductor Field-Effect Transistors
Analysis of Switching Time of Monostable-Bistable Transition Logic Elements Based on Simple Model Calculation
Improvement of Ge/AlGaAs Air-Exposed Interfaces Grown by MBE and Their Application to n+-Ge Gate AlGaAs/GaAs MISFETs

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