Compensation Mechanism in Heavily Si-Doped GaAs Grown by MBE
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概要
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The concentrations of Si-related sites in heavily Si-doped GaAs grown by MBE at 450℃ and 65O℃ are investigated by laser Raman spectroscopy. Almost all of the Si atoms are incorporated on Ga sites in both samples. However, in the 650℃ sample, about one third of the Si atoms on Ga sites (Si_<Ga>) associate with Ga vacancies (V_<Ga>) to form the Si_<Ga>-V_<Ga> acceptors, which dominate the compensation mechanism.
- 社団法人応用物理学会の論文
- 1990-04-20
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