Operation Speed Consideration of Resonant Tunneling Logic Gate Based on Circuit Simulation (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)

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概要

• 論文の詳細を見る

• We analyzed the operation speed of the resonant tunneling logic gate, MOBILE, using a simple equivalent circuit model and varying parameters of I-V characteristics and capacitance of RTTs (resonant tunneling transistors) . The switching time for large peak-to-valley (P/V) current ratios is smaller at small V_<bmax> (maximum bias voltage) , but larger at large V_<bmax> than that for small P/V ratios in the case of present I-V characteristics with flat valley current. It is also demonstrated that the MOBILE operation fails if the bias voltage rises too fast, when the capacitance of the load and the driver is different due to the displacement current through the capacitance. These behaviors can be explained by considering the potential diagrams of the circuit.

• 社団法人電子情報通信学会の論文
• 1996-11-25

著者

• Maezawa Koichi

  Ntt System Electronics Laboratories:(present) Faculty Of Engineering Nagoya University

• Maezawa Koichi

  Ntt Lsi Laboratories

• Kishimoto Shigeru

  Department Of Quantum Engineering Nagoya University

• Maezawa K

  Graduate School Of Science And Engineering University Of Toyama

• OHNO Yutaka

  the Faculty of Engineering,Nagoya University

• KISHIMOTO Shigeru

  the Faculty of Engineering,Nagoya University

• MIZUTANI Takashi

  the Faculty of Engineering,Nagoya University

• Maezawa Koichi

  Univ. Of Toyama Toyama‐shi Jpn

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