Improvement of Ge/AlGaAs Air-Exposed Interfaces Grown by MBE and Their Application to n+-Ge Gate AlGaAs/GaAs MISFETs
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概要
- 論文の詳細を見る
The properties of air-exposed Ge/AlGaAs hetero-interfaces were studied with the aim of improving them. Based on $C$-$V$ measurements of n+-Ge gate MIS diodes it was found that the thermal etching of a 30 nm GaAs cap layer, which passivates the AlGaAs surface during air-exposure, drastically improves the interface properties. It was also found that the dominant factor determining the properties of the air-exposed hetero-interfaces is not the thermal etching temperature itself but the etching depth. The reduction mechanism of the interface charges is discussed based on SIMS and TEM measurements. It is shown that structural imperfections such as interface disorder and/or dislocations play an important role in determining the interface properties. The above results were successfully applied to an n+-Ge gate MISFET using a pattern inversion process.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-05-20
著者
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Maezawa Koichi
Ntt Lsi Laboratories
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Mizutani Takashi
Ntt Lsi Laboratories
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Maezawa Koichi
NTT LSI Laboratories, 3-1, Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-01
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