Effects of Impurities in GaAs/AlAs Double-Barrier Structures on Resonant Transmission Coefficients
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概要
- 論文の詳細を見る
The resonant transmission coefficients for GaAs/AlAs double-barrier structures are estimated from the d^2I/dV^2-V characteristics of resonant tunneling diodes and the effects of impurities doped in these structures are investigated. The estimation method was proven to be reliable by comparing the I-V curve reproduced from the experimentally estimated coefficients with the measured curve. Double peaks were found in the transmission coefficient for samples doped with Si in the well. The two peaks observed are probably attributable to tunneling through the quasi-bound state created by impurities and to tunneling through the resonant state.
- 社団法人応用物理学会の論文
- 1993-01-30
著者
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Fukuyama Hiroyuki
Department Of Chemistry And Materials Science Tokyo Institute Of Technology
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Fukuyama H
Ntt System Electrics Lab. Kanagawa Jpn
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Fukuyama Hiroyuki
Ntt Lsi Laboratories
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Mizutani Takashi
Ntt Lsi Laboratories
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FUKUYAMA Hiroyuki
Graduate School of Science and Engineering, Tokyo Institute of Technology
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WAHO Takao
NTT LSI Laboratories
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Fukuyama H
Tokyo Inst. Technol. Tokyo Jpn
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Waho T
Ntt System Electronics Lab. Kanagawa Jpn
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Waho T
Sophia Univ. Tokyo Jpn
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Waho T
Department Of Electrical And Electronics Engineering Sophia University
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