Photoemission and RHEED Studies of Bonding Properties at the CaF_2/GaAs(001) Interface
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概要
- 論文の詳細を見る
Surface-sensitive analysis with synchrotron radiation photoemission spectroscopy is performed to determine the bonding properties of MBE-grown CaF_2 films on GaAs(001) substrates for different substrate temperatures. Ca atoms in the unoxidized state and in the 1+ oxidation state exist at the interface at high (about 580℃) substrate temperature as a result of CaF_2 dissociation reaction; the RHEED pattern which appears only in the high temperature condition, is related to Ca atoms in both the unoxidized state and the 1+ oxidation state. At low (about 420℃) substrate temperature, CaF_2 does not dissociate.
- 社団法人応用物理学会の論文
- 1989-02-20
著者
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Oshima M
Department Of Applied Chemistry The University Of Tokyo
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Oshima Masaharu
Ntt Applied Electronics Laboratories
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KAWAMURA Tomoaki
NTT Applied Electronics Laboratories
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Kawamura Tatsuo
Department Of Electrical Engineering Shibaura Institute Of Technology
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WAHO Takao
NTT LSI Laboratories
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Kawamura T
Department Of Mathematics And Physics University Of Yamanashi
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Yamada Maruo
Ntt Applied Electronics Laboratories
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Kawamura Takao
Laboratory Of Plant Physiology Graduate School Of Agriculture Kyoto University:(present Address)sumi
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Waho T
Ntt System Electronics Lab. Kanagawa Jpn
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Waho T
Sophia Univ. Tokyo Jpn
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Waho T
Department Of Electrical And Electronics Engineering Sophia University
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