Threshold Logic Function on Both Positive and Negative Weighted Sums in Multiple-Input Monostable-Bistable Transition Logic Elements
スポンサーリンク
概要
- 論文の詳細を見る
This paper describes the functional operation of a monostable-bistable transition logic element (MOBILE) with multiple-input logic gates. The MOBILE uses two resonant-tunneling transistors (RTTs) connected in series and driven by oscillating bias voltage to produce a mono-to-bistable transition of the circuit. It is experimentally shown that a fabricated 3-input MOBILE can perform threshold logic functions on the weighted sum of input signals. It can also easily handle both positive and negative weights when input signals are applied to both RTTs.
- 社団法人応用物理学会の論文
- 1994-01-30
著者
-
Maezawa Koichi
Ntt System Electronics Laboratories:(present) Faculty Of Engineering Nagoya University
-
Maezawa Koichi
Ntt Lsi Laboratories
-
Mizutani Takashi
Ntt Lsi Laboratories
-
AKEYOSHI Tomoyuki
NTT System Electronics Laboratories
-
Akeyoshi Tomoyuki
NTT LSI Laboratories
-
Akeyoshi Tomoyuki
Ntt Photonics Laboratories Atsugi
-
Akeyoshi T
Ntt System Electronics Laboratories
-
Maezawa K
Graduate School Of Science And Engineering University Of Toyama
関連論文
- Ultra-Short Pulse Generators Using Resonant Tunneling Diodes and Their Integration with Antennas on Ceramic Substrates
- Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs
- Dual-Wavelength High-Power Laser Diodes Fabricated by Selective Fluidic Self-Assembly
- Dual wavelength high power laser diodes fabricated by Selective Fluidic Self-Assembly technique
- Suppression of Hysteresis in Carbon Nanotube Field-Effect Transistors : Effect of Contamination Induced by Device Fabrication Process
- Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes
- Fabrication of Antigen Sensors Using Carbon Nanotube Field Effect Transistors
- Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate
- Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
- Effects of Fabrication Process on Current-Voltage Characteristics of Carbon Nanotube Field Effect Transistors
- Photoresponse of Carbon Nanotube Field-Effect Transistors
- Growth of mm-Long Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition
- Tunable Field-Effect Transistor Device with Metallofullerene Nanopeapods
- Fabricated on a GaAs-based Semiconductor-on-Insulator Substrate Using a Spin-On Low-k Dielectric Film
- Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors
- Electroluminescence in AlGaN/GaN High Electron Mobility Transistors under High Bias Voltage (Short Note)
- Temperature Distribution Measurement in AlGaN/GaN High-Electron-Mobility Transistors by Micro-Raman Scattering Spectroscopy : Semiconductors
- Identification of Vacancy-Type Defects in Molecular Beam Epitaxy-Grown GaAs Using a Slow Positron Beam
- Ultra-Fast Optoelectronic Decision Circuit Using Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode (Special Issue on Integrated Electronics and New System Paradigms)
- A Large Output Voltage Swing of a Resonant Tunneling Flip-Flop Circuit Employing a Monostable-Bistable Transition Logic Element (MOBILE)
- A Novel Delayed Flip-Flop Circuit Using Resonant Tunneling Logic Gates
- High-Speed Static Frequency Divider Employing Resonant Tunneling Diodes and HEMTs
- High-Speed and Low-Power D-FF Employing MOBILEs : Monostable-Bistable Transition Logic Elements
- Fabrication of vertically-aligned CNT electrodes using plasma-enhanced CVD for chemical sensors
- Monostable-Bistable Transition Logic Elements (MOBILEs) Based on Monolithic Integration of Resonant Tunneling Diodes and FETs
- An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- An Optoelectronic Logic Gate Monolithically Integrating Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode
- Electron Tunneling Process between the Two Ground States in Coupled Quantum Well Structure
- Tunneling Time between Resonantly Coupled Quantum Wells : Measurement and Comparison with h/ΔE
- High-Speed Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit
- Robust Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit
- Resonant Tunneling Chaos Generator for High-Speed/Low-Power Frequency Divider
- ITO基板上有機EL材料の基板表面処理による膜特性と多結晶化
- Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n^+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors
- ポリプロピレン共重合体フィルムの空間電荷と電気伝導特性
- EL差スペクトルを利用した有機ELの発光挙動解析(機能性有機薄膜・一般)
- A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch
- Low-temperature growth of carbon nanotubes by grid-inserted plasma-enhanced chemical vapor deposition
- High Power and Stable Oscillations in the RTD Pair Oscillator ICs Fabricated with Metamorphic RTDs
- Novel Resonant Tunneling Diode Oscillator Capable of Large Output Power Operation(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Input Power Dependence of Large-Signal Microwave Characteristics of Resonant-Tunneling High Electron Mobility Transistors
- Transport Properties of Buried AlGaAs/GaAs Quantum Wires
- Device Technology for Monolithic Integration of InP-Based Resonant Tunneling Diodes and HEMTs (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- InP-Based High-Performance Monostable-Bistable Transistion Logic Element (MOBILE):an Intelligent Logic Gate Featuring Weighted-Sum Threshold Operations
- InP-Based High-Performance Monostable-Bistable Transition Logic elements (MOBILEs) Using Resonant-Tunneling Devices
- Temperature Dependence of the Phase Coherence Length of High-Mobility AlGaAs/GaAs Quantum-Wire Rings
- A Delta-Sigma Analog-to-Digital Converter Using Resonant Tunneling Diodes(Semiconductors)
- Effects of Impurities in GaAs/AlAs Double-Barrier Structures on Resonant Transmission Coefficients
- Effects of Impurity Scattering on Resonant Transmission Coefficients in GaAs/AlAs Double-Barrier Structures
- 10-GHz Operation of Multiple-Valued Quantizers Using Resonant-Tunneling Devices (Special Issue on Multiple-Valued Logic and Its Applications)
- Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
- Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
- Threshold Logic Function on Both Positive and Negative Weighted Sums in Multiple-Input Monostable-Bistable Transition Logic Elements
- Monte Carlo Study of Charge Injection Transistors (CHINTs)
- Resonant Tunneling in a Novel Coupled-Quantum-Well Base Transistor
- Experimental Derivation of Resonant Tunneling Transit Time Using a Coupled-Quantum-Well Base Transistor
- Compensation Mechanism in Heavily Si-Doped GaAs Grown by MBE
- Characterization of Lattice Sites and Compensation Mechanism in Heavily Si-Doped GaAs with Laser Raman Spectroscopy
- Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs
- Photoluminescence Study of Resonant Tunneling Transistor with p^+/n-Junction Gate
- Measurement of Contact Potential of GaAs pn Junctions by Kelvin Probe Force Microscopy
- Measurement of Contact Potential of GaAs/AlGaAs Heterostructure Using Kelvin Probe Force Microscopy
- Operation Speed Consideration of Resonant Tunneling Logic Gate Based on Circuit Simulation (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Monte Carlo Simulation of Response Time for Velocity Modulation Transistors
- Drain Current DLTS Study of an AlGaAs/GaAs MISFET
- A New Resonant Tunneling Logic Gate Employing Monostable-Bistable Transition
- High-Frequency Characteristics of Charge-Injection Transistor-Mode Operation in AlGaAs/InGaAs/GaAs Metal-Insulator-Semiconductor Field-Effect Transistors
- Analysis of Switching Time of Monostable-Bistable Transition Logic Elements Based on Simple Model Calculation
- Conductance Oscillations in a Quantum Wire with a Stub Structure due to Quantum Interference
- Improvement of Ge/AlGaAs Air-Exposed Interfaces Grown by MBE and Their Application to n+-Ge Gate AlGaAs/GaAs MISFETs