Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs
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概要
- 論文の詳細を見る
The low-frequency noise of InGaAs pseudomorphic HEMTs fabricated on GaAs substrate was studied. The dependence of the noise spectral density on the gate voltage indicates that the channel of the device dominates the low-frequency noise. Generation-recombination (G-R) noise was observed in the form of bulges superimposed on a background of 1/f. The activation energy of the G-R noise was 0.32-0.39 eV which is close to that of the DX center, suggesting that the origin of the G-R noise is the DX center in the AlGaAs barrier layer. Little bulge was observed in the gate current noise of the HEMTs with large InAs mole fractions of 0.4 and 0.5. Generation of the traps with different time constant can explain this behavior.
- 社団法人電子情報通信学会の論文
- 2001-10-01
著者
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KISHIMOTO Shigeru
Graduate School of Engineering, Nagoya University
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Maezawa Koichi
Ntt System Electronics Laboratories:(present) Faculty Of Engineering Nagoya University
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Kishimoto Shigeru
Department Of Quantum Engineering Nagoya University
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Yamamoto M
Nagoya Univ. Nagoya‐shi Jpn
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Maezawa K
Graduate School Of Science And Engineering University Of Toyama
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MIZUTANI Takashi
the Department of Quantum Engineering, Nagoya University
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YAMAMOTO Makoto
the Department of Quantum Engineering, Nagoya University
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KISHIMOTO Shigeru
the Department of Quantum Engineering, Nagoya University
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MAEZAWA Koichi
the Department of Quantum Engineering, Nagoya University
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Yamamoto Makoto
The Department Of Quantum Engineering Nagoya University
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Mizutani Takashi
The Department Of Quantum Engineering Nagoya University
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Maezawa Koichi
Univ. Of Toyama Toyama‐shi Jpn
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