Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy

スポンサーリンク

概要

• 論文の詳細を見る
• 1997-09-16

著者

• MIZUTANI Takashi

  Department of Quantum Engineering, Nagoya University

• IWAMURA Hidetoshi

  NTT Opto-electronics Laboratories

• Mizutani Takashi

  Department Of Health Sciences Yamanashi Medical University

• KISHIMOTO Shigeru

  Department of Quantum Engineering, Nagoya University

• KAGAWA Toshiaki

  NTT Opto-electronics Laboratories

• Arakawa Masashi

  Department Of Life Long Health Promotion College Of Education Ryukyus University

• Arakawa Masashi

  Department Of Quantum Engineering Nagoya Unviersity

• Kishimoto Shigeru

  Department Of Quantum Engineering Nagoya University

• Kishimoto Shigeru

  Department Of Electrical Engineering Faculty Of Engineering Nagoya University

• USUNAMI Takao

  Department of Quantum Engineering, Nagoya Unviersity

• Iwamura H

  Ntt Opto-electronics Laboratories

• Usunami Takao

  Department Of Quantum Engineering Nagoya University

• Mizutani Takashi

  Department Of Electronics Faculty Of Engineering Nagoya University

• Kagawa T

  Ntt Opto-electronics Laboratories

• Mizutani Takashi

  Department Of Electrical Engineering Faculty Of Engineering Nagoya University

• IWAMURA Hidetoshi

  NTT Optc-electronics Laboratories

関連論文

• Ultra-Short Pulse Generators Using Resonant Tunneling Diodes and Their Integration with Antennas on Ceramic Substrates
• Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs
• Dual-Wavelength High-Power Laser Diodes Fabricated by Selective Fluidic Self-Assembly
• Dual wavelength high power laser diodes fabricated by Selective Fluidic Self-Assembly technique
• 色素増感太陽電池の等価回路解析
• 色素増感太陽電池の等価回路解析(有機エレクトロニクス・一般)
• Operation Characteristics of a Side-Light-Injection Multiple-Quantum-Well Bistable Laser for All-Optical Switching
• Suppression of Hysteresis in Carbon Nanotube Field-Effect Transistors : Effect of Contamination Induced by Device Fabrication Process
• Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes
• Fabrication of Antigen Sensors Using Carbon Nanotube Field Effect Transistors
• Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate
• Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
• Effects of Fabrication Process on Current-Voltage Characteristics of Carbon Nanotube Field Effect Transistors
• Photoresponse of Carbon Nanotube Field-Effect Transistors
• Growth of mm-Long Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition
• Tunable Field-Effect Transistor Device with Metallofullerene Nanopeapods
• Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
• Fluid Dynamic Assembly of Semiconductor Blocks for Heterogeneous Integration
• Fabrication Technique for Carbon Nanotube Single-Electron Transistors Using Focused Ion Beam
• Fabricated on a GaAs-based Semiconductor-on-Insulator Substrate Using a Spin-On Low-k Dielectric Film
• Position-Controlled Carbon Nanotube Field-Effect Transistors Fabricated by Chemical Vapor Deposition Using Patterned Metal Catalyst
• Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors
• Electroluminescence in AlGaN/GaN High Electron Mobility Transistors under High Bias Voltage (Short Note)
• Temperature Distribution Measurement in AlGaN/GaN High-Electron-Mobility Transistors by Micro-Raman Scattering Spectroscopy : Semiconductors
• AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si_3N_4 Gate Insulator
• Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN
• Fluidic Assembly of Thin GaAs Blocks on Si Substrates
• Comparison of Electrical Characteristics of Metamorphic HEMTs with InP HEMTs and PHEMTs
• Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistors
• Fabrication of vertically-aligned CNT electrodes using plasma-enhanced CVD for chemical sensors
• ポリフルオレン系材料による高分子EL素子の発光特性の検討
• 1.3-μm Surface-Normal Reflective Optical Modulators Based on the Wannier-Stark Effect in InP/InGaAsP Superlattices
• リニア低密度ポリエチレンの空間電荷特性と電極効果
• LLDPEの空間電荷特性
• チーグラー触媒を用いて作製されたLDPEの空間電荷分布
• A questionnaire survey of hand dermatitis among Japanese nursing students
• Hand Dermatitis and Musculoskeletal Disorders among Female Nursing Students in Japan
• Transport Properties in InP/InAlAs Type II Single Heterostructure
• High-Frequency Measurements of Plasma Parameters in Electron Cyclotron Resonance Plasma Etchers(Nuclear Science, Plasmas, and Electric Discharges)
• ポリイミドの空間電荷特性に対する水分の影響
• Enhancement-Mode n-Channel GaN MOSFETs Using HfO_2 as a Gate Oxide
• High-Speed Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit
• Robust Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit
• Resonant Tunneling Chaos Generator for High-Speed/Low-Power Frequency Divider
• CF_X (X=1-3) Radical Measurements in ECR Etching Plasma Employing C_4F_8 Gas by Infrared Diode Laser Absorption Spectroscopy
• CF_X(X=1-3) Radicals Controlled by On-Off Modulated Electron Cyclotron Resonance Plasma and Their Effects on Polymer Film Deposition ( Plasma Processing)
• ITO基板上有機EL材料の基板表面処理による膜特性と多結晶化
• ITOの表面処理法の違いが有機EL素子特性に及ぼす影響
• Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n^+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors
• Electroluminescence Measurement of n^+ Self-Alighed Gate GaAs MESFETs
• Electroluminescence Measurement of n Self-Aligned GaAs MESFETs
• Contact Potential Measurement of Carbon Nanotube by Kelvin Probe Force Microscopy
• ポリプロピレン共重合体フィルムの空間電荷と電気伝導特性
• EL差スペクトルを利用した有機ELの発光挙動解析(機能性有機薄膜・一般)
• Optical Properties of an InGaAlAs/InP Type-II Superlattice
• Type I/Type II Transition in InGaAlAs/InP Multiple Quantum Well Structures Grown by Gas Source Molecular Beam Epitaxy
• Electroabsorption in an AlInAs/InP Type II Superlattice
• Thermal Expansion Coefficient of Boron Monophosphide
• Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy
• Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy
• Kelvin Probe Force Microscopy for Potential Distribution Measurement of Cleaved Surface of GaAs Devices
• Kelvin Probe Force Microscopy for Potential Distribution Measurement of Cleaved Surface of GaAs Devices
• ParaBIT : Parallel Optical Interconnection for Large-Capacity ATM Switching Systems (Joint Special Issue on Photonics in Switching : Systems and Devices)
• ParaBIT: Parallel Optical Interconnection for Large-Capacity ATM Switching Systems (Joint Special Issue on Photonics in Switching : Systems and Devices)
• Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer
• A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch
• Low-temperature growth of carbon nanotubes by grid-inserted plasma-enhanced chemical vapor deposition
• High Power and Stable Oscillations in the RTD Pair Oscillator ICs Fabricated with Metamorphic RTDs
• Novel Resonant Tunneling Diode Oscillator Capable of Large Output Power Operation(THz Devices,Heterostructure Microelectronics with TWHM2005)
• CsBrを電子注入材料とした有機EL素子の発光特性
• 半透明金属陽極を用いた有機LEDの特性
• Correlation between Change in PD Current Shapes and Ageing by the Oxidation of Void Surface
• Measurement of Cross-Sectional Potential of Compound Semiconductor Heterostructures in Vacuum Condition by Kelvin Probe Force Microscopy
• Measurement of Cross-Sectional Potential of Compound Semiconductor Heterostructures in Vacuum Condition by Kelvin Probe Force Microscopy
• bcl-2 Expression on Prostate Cancer and its Relationship to Cell Cycle and Prognosis
• Measurements of the CF, CF_2 and CF_3 Radicals in a CHF_3 Electron Cyclotron Resonance Plasma
• 異なる低密度ポリエチレン界面における空間電荷挙動
• Atomic Force Microscopy and Kelvin Probe Force Microscopy Measurements of Semiconductor Surface Using Carbon Nanotube Tip Fabricated by Electrophoresis
• AFM and KFM Measurements of Semiconductor Surface Using Carbon Nanotube Tip Fabricated by Electrophoresis
• An examination of sleep health, lifestyle and mental health in junior high school students
• Short naps and exercise improve sleep quality and mental health in the elderly
• Survey of sleep-health and lifestyle of the elderly in Okinawa
• Sleep health and lifestyle of elderly people in Ogimi, a village of longevity
• Measurement of Cross-Sectional Potential of InAlAs/InGaAs Layered Structures in Vacuum by Kelvin Probe Force Microscopy
• Comparative study on sleep health and lifestyle of the elderly in the urban areas and suburbs of Okinawa
• Medium Scale Integrated Circuits Using Carbon Nanotube Thin Film Transistors
• High-Performance Top-Gate Carbon Nanotube Field-Effect Transistors and Complementary Metal-Oxide-Semiconductor Inverters Realized by Controlling Interface Charges
• A Delta-Sigma Analog-to-Digital Converter Using Resonant Tunneling Diodes(Semiconductors)
• InP/InAlAs Resonant Tunneling Diodes Grown by Gas Source Molecular Beam Epitaxy
• Compositional Disordering of In_Ga_As/InP Multiquantum Well Structures by Repetitive Rapid Thermal Annealing
• Switching Characteristics of InGaAs/InP Multiquantum Well Voltage-Controlled Bistable Laser Diodes
• Change in PD pulse shape with ageing
• Effect of Plaslma Off Time on the Structure and Electrical Properties of Hydrogenated Amorphous Silicon Carbide Films Prepared by Pulse-Modulated Plasma Deposition : Semiconductors
• Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
• Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
• Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs
• Photoluminescence Study of Resonant Tunneling Transistor with p^+/n-Junction Gate
• Measurement of Contact Potential of GaAs pn Junctions by Kelvin Probe Force Microscopy
• Characterization of Carbon Nanotube FETs by Electrostatic Force Microscopy(Session3: Emerging Devices I)
• Investigation of Interface Charges of High-k Gate Dielectrics and Their Effects on Carbon Nanotube Field-Effect Transistors

もっと見る 閉じる

スポンサーリンク