InP/InAlAs Resonant Tunneling Diodes Grown by Gas Source Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
An InP/InAlAs double-barrier resonant tunneling diode (DB-RTD) is grown by gas source molecular beam epitaxy for the first time. It shows clear negative differential resistance (NDR) at 77 K, and the NDR peak current density agrees well with the value calculated using the conduction band offset (0.35 eV), which is determined from the intersubband absorption measurement. A pseudomorphic InP/AlAs DB-RTD is also fabricated, which shows clear NDR at room temperature.
- 社団法人応用物理学会の論文
- 1992-12-15
著者
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KAWAMURA Yuichi
NTT Opto-electronics Laboratories
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IWAMURA Hidetoshi
NTT Opto-electronics Laboratories
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Kawamura Y
Osaka Prefecture Univ. Osaka Jpn
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IWAMURA Hidetoshi
NTT Optc-electronics Laboratories
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KAWAMURA Yuichi
NTT Optc-electronics Laboratories
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