MIZUTANI Takashi | Department of Quantum Engineering, Nagoya University

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Dual-Wavelength High-Power Laser Diodes Fabricated by Selective Fluidic Self-Assembly
Dual wavelength high power laser diodes fabricated by Selective Fluidic Self-Assembly technique
Suppression of Hysteresis in Carbon Nanotube Field-Effect Transistors : Effect of Contamination Induced by Device Fabrication Process
Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes
Fabrication of Antigen Sensors Using Carbon Nanotube Field Effect Transistors
Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate
Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
Effects of Fabrication Process on Current-Voltage Characteristics of Carbon Nanotube Field Effect Transistors
Photoresponse of Carbon Nanotube Field-Effect Transistors
Growth of mm-Long Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition
Tunable Field-Effect Transistor Device with Metallofullerene Nanopeapods
Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
Fluid Dynamic Assembly of Semiconductor Blocks for Heterogeneous Integration
Fabrication Technique for Carbon Nanotube Single-Electron Transistors Using Focused Ion Beam
Fabricated on a GaAs-based Semiconductor-on-Insulator Substrate Using a Spin-On Low-k Dielectric Film
Position-Controlled Carbon Nanotube Field-Effect Transistors Fabricated by Chemical Vapor Deposition Using Patterned Metal Catalyst
Electroluminescence in AlGaN/GaN High Electron Mobility Transistors under High Bias Voltage (Short Note)
Temperature Distribution Measurement in AlGaN/GaN High-Electron-Mobility Transistors by Micro-Raman Scattering Spectroscopy : Semiconductors
AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si_3N_4 Gate Insulator
Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN
Fluidic Assembly of Thin GaAs Blocks on Si Substrates
Comparison of Electrical Characteristics of Metamorphic HEMTs with InP HEMTs and PHEMTs
Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistors
Fabrication of vertically-aligned CNT electrodes using plasma-enhanced CVD for chemical sensors
A questionnaire survey of hand dermatitis among Japanese nursing students
Hand Dermatitis and Musculoskeletal Disorders among Female Nursing Students in Japan
Enhancement-Mode n-Channel GaN MOSFETs Using HfO_2 as a Gate Oxide
High-Speed Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit
Robust Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit
Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n^+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors
Electroluminescence Measurement of n^+ Self-Alighed Gate GaAs MESFETs
Electroluminescence Measurement of n Self-Aligned GaAs MESFETs
Thermal Expansion Coefficient of Boron Monophosphide
Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy
Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy
Kelvin Probe Force Microscopy for Potential Distribution Measurement of Cleaved Surface of GaAs Devices
Kelvin Probe Force Microscopy for Potential Distribution Measurement of Cleaved Surface of GaAs Devices
Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer
Measurement of Cross-Sectional Potential of Compound Semiconductor Heterostructures in Vacuum Condition by Kelvin Probe Force Microscopy
Measurement of Cross-Sectional Potential of Compound Semiconductor Heterostructures in Vacuum Condition by Kelvin Probe Force Microscopy
bcl-2 Expression on Prostate Cancer and its Relationship to Cell Cycle and Prognosis
Atomic Force Microscopy and Kelvin Probe Force Microscopy Measurements of Semiconductor Surface Using Carbon Nanotube Tip Fabricated by Electrophoresis
AFM and KFM Measurements of Semiconductor Surface Using Carbon Nanotube Tip Fabricated by Electrophoresis
Measurement of Cross-Sectional Potential of InAlAs/InGaAs Layered Structures in Vacuum by Kelvin Probe Force Microscopy
High-Performance Top-Gate Carbon Nanotube Field-Effect Transistors and Complementary Metal-Oxide-Semiconductor Inverters Realized by Controlling Interface Charges
Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
Characterization of Carbon Nanotube FETs by Electrostatic Force Microscopy(Session3: Emerging Devices I)
Investigation of Interface Charges of High-k Gate Dielectrics and Their Effects on Carbon Nanotube Field-Effect Transistors

もっと見る

スポンサーリンク