Measurement of Cross-Sectional Potential of Compound Semiconductor Heterostructures in Vacuum Condition by Kelvin Probe Force Microscopy
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概要
- 論文の詳細を見る
Cross-sectional contact potential images of the GaAs pn junction and InAlAs/InGaAs layered structures have been successfully obtained by Kelvin probe force microscopy (KEM) both in air condition and in vacuum condition. The results showed that the contact potential difference of these materials in vacuum condition were much higher than that in air condition. The spatial resolution of the present KFM was investigated by measuring the InAlAs/InGaAs layered structures with various thicknesses. The lateral resolution of contact potential was improved to be approximately 20 nm in vacuum condition.
- 社団法人電子情報通信学会の論文
- 2002-06-25
著者
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水谷 照吉
愛知工業大学電気工学科
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Kumada Kei-ichiro
Department Of Quantum Engineering Nagoya University
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MIZUTANI Takashi
Department of Quantum Engineering, Nagoya University
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Mizutani T
Nagoya Univ. Nagoya‐shi Jpn
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Mizutani Takashi
Department Of Health Sciences Yamanashi Medical University
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KISHIMOTO Shigeru
Department of Quantum Engineering, Nagoya University
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Kishimoto Shigeru
Department Of Quantum Engineering School Of Engineering Nagoya University
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Kishimoto Shigeru
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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XIE Tengfeng
Department of Quantum Engineering, Nagoya University
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Xie Tengfeng
Department Of Quantum Engineering Nagoya University:nagoya University Venture Business Laboratory Na
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Xie Tengfeng
Department Of Quantum Engineering Nagoya University
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Mizutani Takashi
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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