Temperature Distribution Measurement in AlGaN/GaN High-Electron-Mobility Transistors by Micro-Raman Scattering Spectroscopy : Semiconductors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-04-15

著者

• 水谷 照吉

  愛知工業大学電気工学科

• Ohno Y

  Jst‐presto Saitama Jpn

• KISHIMOTO Shigeru

  Graduate School of Engineering, Nagoya University

• Ohno Yoshikazu

  Ulsi Laboratory Mitsubishi Electric Corporation

• MAEZAWA Koichi

  Department of Quantum Engineering, Nagoya University

• MIZUTANI Takashi

  Department of Quantum Engineering, Nagoya University

• Maezawa Koichi

  Ntt System Electronics Laboratories:(present) Faculty Of Engineering Nagoya University

• Mizutani T

  Nagoya Univ. Nagoya‐shi Jpn

• Mizutani Takashi

  Department Of Health Sciences Yamanashi Medical University

• OHNO Yutaka

  Department of Quantum Engineering, Nagoya University

• KISHIMOTO Shigeru

  Department of Quantum Engineering, Nagoya University

• AKITA Mitsutoshi

  Department of Quantum Engineering, Nagoya University

• Kishimoto Shigeru

  Department Of Quantum Engineering Nagoya University

• Kishimoto Shigeru

  Department Of Electrical Engineering Faculty Of Engineering Nagoya University

• Okamoto Yasunori

  Research And Headquarters Kubota Corporation

• Ohno Yutaka

  Department Of Information Science Faculty Of Engineering Kyoto University

• Maezawa K

  Graduate School Of Science And Engineering University Of Toyama

• Mizutani Takashi

  Department Of Electronics Faculty Of Engineering Nagoya University

• Maezawa Koichi

  Department Of Physics School Of Science And Engineering Waseda University:atsugi Electrical Communic

• Akita Mitsutoshi

  Department Of Quantum Engineering Nagoya University

• Mizutani Takashi

  Department Of Electrical Engineering Faculty Of Engineering Nagoya University

• Maezawa Koichi

  Univ. Of Toyama Toyama‐shi Jpn

• Ohno Yutaka

  Department of Applied Chemistry, Faculty of Engineering, Tohoku University

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