Electroluminescence in AlGaN/GaN High Electron Mobility Transistors under High Bias Voltage (Short Note)
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-04-15
著者
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水谷 照吉
愛知工業大学電気工学科
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Ohno Y
Jst‐presto Saitama Jpn
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KISHIMOTO Shigeru
Graduate School of Engineering, Nagoya University
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Ohno Yoshikazu
Ulsi Laboratory Mitsubishi Electric Corporation
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MAEZAWA Koichi
Department of Quantum Engineering, Nagoya University
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MIZUTANI Takashi
Department of Quantum Engineering, Nagoya University
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NAKAO Takeshi
Department of Electrical and Information Systems, Osaka Prefecture University
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Maezawa Koichi
Ntt System Electronics Laboratories:(present) Faculty Of Engineering Nagoya University
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Mizutani T
Nagoya Univ. Nagoya‐shi Jpn
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Mizutani Takashi
Department Of Health Sciences Yamanashi Medical University
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OHNO Yutaka
Department of Quantum Engineering, Nagoya University
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KISHIMOTO Shigeru
Department of Quantum Engineering, Nagoya University
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AKITA Mitsutoshi
Department of Quantum Engineering, Nagoya University
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Kishimoto Shigeru
Department Of Quantum Engineering Nagoya University
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Kishimoto Shigeru
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Okamoto Yasunori
Research And Headquarters Kubota Corporation
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Ohno Yutaka
Department Of Information Science Faculty Of Engineering Kyoto University
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Nakao Takeshi
Department Of Electrical And Information Systems Osaka Prefecture University
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Maezawa K
Graduate School Of Science And Engineering University Of Toyama
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Mizutani Takashi
Department Of Electronics Faculty Of Engineering Nagoya University
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Nakao Takeshi
Department Of Quantum Engineering Nagoya University
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Maezawa Koichi
Department Of Physics School Of Science And Engineering Waseda University:atsugi Electrical Communic
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Akita Mitsutoshi
Department Of Quantum Engineering Nagoya University
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Mizutani Takashi
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Maezawa Koichi
Univ. Of Toyama Toyama‐shi Jpn
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Ohno Yutaka
Department of Applied Chemistry, Faculty of Engineering, Tohoku University
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