OHNO Yutaka | Department of Quantum Engineering, Nagoya University

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概要

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著作論文

Suppression of Hysteresis in Carbon Nanotube Field-Effect Transistors : Effect of Contamination Induced by Device Fabrication Process
Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes
Fabrication of Antigen Sensors Using Carbon Nanotube Field Effect Transistors
Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate
Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
Effects of Fabrication Process on Current-Voltage Characteristics of Carbon Nanotube Field Effect Transistors
Photoresponse of Carbon Nanotube Field-Effect Transistors
Growth of mm-Long Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition
Tunable Field-Effect Transistor Device with Metallofullerene Nanopeapods
Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
Fluid Dynamic Assembly of Semiconductor Blocks for Heterogeneous Integration
Fabrication Technique for Carbon Nanotube Single-Electron Transistors Using Focused Ion Beam
Fabricated on a GaAs-based Semiconductor-on-Insulator Substrate Using a Spin-On Low-k Dielectric Film
Position-Controlled Carbon Nanotube Field-Effect Transistors Fabricated by Chemical Vapor Deposition Using Patterned Metal Catalyst
Electroluminescence in AlGaN/GaN High Electron Mobility Transistors under High Bias Voltage (Short Note)
Temperature Distribution Measurement in AlGaN/GaN High-Electron-Mobility Transistors by Micro-Raman Scattering Spectroscopy : Semiconductors
A Verification Method for Formal Requirements Description
AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si_3N_4 Gate Insulator
Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN
Fluidic Assembly of Thin GaAs Blocks on Si Substrates
Comparison of Electrical Characteristics of Metamorphic HEMTs with InP HEMTs and PHEMTs
Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistors
High-Speed Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit
Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n^+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors
Electroluminescence Measurement of n^+ Self-Alighed Gate GaAs MESFETs
Electroluminescence Measurement of n Self-Aligned GaAs MESFETs
Concurrent LISP and Its Interpreter
A Supporting System for Software Maintenance : Ripple Effect Analysis of Requirements Description Modification
Software Design Process: Chrysalis Stage under the Control of Designers
Fabrication of Short-Range Ordered Nanoholes on Silicon Surfaces by Electron Irradiation
Study of Electron-Irradiation-Induced Defects in GaP by In-situ Optical Spectroscopy in a Transmission Electron Microscope
Analysis of polarization by means of polarized cathodoluminescence spectroscopy in a TEM
High-Performance Top-Gate Carbon Nanotube Field-Effect Transistors and Complementary Metal-Oxide-Semiconductor Inverters Realized by Controlling Interface Charges
Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors

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