Software Design Process: Chrysalis Stage under the Control of Designers
スポンサーリンク
概要
- 論文の詳細を見る
In order to introduce a well-formed mechanism, controlled by software designers into the traditional design stage, we have developed "Dual-View Integration Simulator(Duvis)" based on the "Dual-View Designing(DVD)" methodology for a demand-oriented software system such as an online software system or a database inquiry system. DVD enables designers to construct an executable and evaluatable prototype of a software system. DVD advances the design process by controlling the transformation of design from the users' view to the programmers' view. In DVD, a prototype is constructed in top-down fashion from the flow-oriented viewpoint (appropriate for users' view) at its early design stag. A prototype from the process-oriented viewpoint is obtained at the final stag. During the intermediate design stage, the stepwise substitution of flow-oriented components for process-oriented components in a prototype is taking place under the control of software designers. Duvis performs testing and evaluation of function and performance for an evolving prototype, gradually introducing the actual running environment in parallel with the design process. Final prototypes with process-oriented views are skeletons of programs to be implemented at the succeeding programming phase. Duvis has been implemented on an IBM/370-compatible computer(MVS/TSO).
- 一般社団法人情報処理学会の論文
- 1984-03-31
著者
-
OHNO Yutaka
Department of Quantum Engineering, Nagoya University
-
Ohno Yutaka
Department Of Information Science Faculty Of Engineering Kyoto University
-
Tabata Koichi
University Of Library And Information Science
-
ITOH KIYOSHI
Laboratory of Systems Engineering, Faculty of Science and Technology, Sophia University
-
Itoh Kiyoshi
Laboratory Of Systems Engineering Faculty Of Science And Technology Sophia University
-
Ohno Yutaka
Department of Applied Chemistry, Faculty of Engineering, Tohoku University
関連論文
- Suppression of Hysteresis in Carbon Nanotube Field-Effect Transistors : Effect of Contamination Induced by Device Fabrication Process
- Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes
- Fabrication of Antigen Sensors Using Carbon Nanotube Field Effect Transistors
- Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate
- Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
- Effects of Fabrication Process on Current-Voltage Characteristics of Carbon Nanotube Field Effect Transistors
- Photoresponse of Carbon Nanotube Field-Effect Transistors
- Growth of mm-Long Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition
- Tunable Field-Effect Transistor Device with Metallofullerene Nanopeapods
- Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
- Fluid Dynamic Assembly of Semiconductor Blocks for Heterogeneous Integration
- Fabrication Technique for Carbon Nanotube Single-Electron Transistors Using Focused Ion Beam
- Fabricated on a GaAs-based Semiconductor-on-Insulator Substrate Using a Spin-On Low-k Dielectric Film
- Position-Controlled Carbon Nanotube Field-Effect Transistors Fabricated by Chemical Vapor Deposition Using Patterned Metal Catalyst
- Electroluminescence in AlGaN/GaN High Electron Mobility Transistors under High Bias Voltage (Short Note)
- Temperature Distribution Measurement in AlGaN/GaN High-Electron-Mobility Transistors by Micro-Raman Scattering Spectroscopy : Semiconductors
- A Verification Method for Formal Requirements Description
- AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si_3N_4 Gate Insulator
- Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN
- Fluidic Assembly of Thin GaAs Blocks on Si Substrates
- Comparison of Electrical Characteristics of Metamorphic HEMTs with InP HEMTs and PHEMTs
- Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistors
- High-Speed Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit
- Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n^+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors
- Electroluminescence Measurement of n^+ Self-Alighed Gate GaAs MESFETs
- Electroluminescence Measurement of n Self-Aligned GaAs MESFETs
- Concurrent LISP and Its Interpreter
- A Supporting System for Software Maintenance : Ripple Effect Analysis of Requirements Description Modification
- Software Design Process: Chrysalis Stage under the Control of Designers
- Fabrication of Short-Range Ordered Nanoholes on Silicon Surfaces by Electron Irradiation
- Extension of MHTML to Text Input and Text Search Functions in Multiple Languages on Off-the-shelf Browsers
- Study of Electron-Irradiation-Induced Defects in GaP by In-situ Optical Spectroscopy in a Transmission Electron Microscope
- Analysis of polarization by means of polarized cathodoluminescence spectroscopy in a TEM
- High-Performance Top-Gate Carbon Nanotube Field-Effect Transistors and Complementary Metal-Oxide-Semiconductor Inverters Realized by Controlling Interface Charges
- Thin Single-Walled Carbon Nanotubes with Narrow Diameter Distribution Grown by Cold-Wall Chemical Vapor Deposition Combined with Co Nanoparticle Deposition
- Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
- Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
- Atomic Structure of a Defect Colony in Silicon Introduced during Neutron Irradiation in the JOYO Reactor
- Diffusion Process of Interstitial Atoms in an Electron Irradiated InP Studied by Transmission Electron Microscopy
- Photoluminescence Study of Resonant Tunneling Transistor with p^+/n-Junction Gate
- Microscopic Photoluminescence Study of InAs Single Quantum Dots Grown on (100) GaAs
- Electrical Properties of Carbon Nanotube Field-Effect Transistors with Multiple Channels Measured by Scanning Gate Microscopy
- Fluid Dynamic Assembly of Semiconductor Blocks for Heterogeneous Integration
- Observation of n-Type Conduction in Carbon Nanotube Field-Effect Transistors with Au Contacts in Vacuum (Special Issue : Solid State Devices and Materials (1))
- Estimation of Height of Barrier Formed in Metallic Carbon Nanotube (Special Issue : Solid State Devices and Materials (1))
- Fabrication of Carbon Nanotubes by Slot-Excited Microwave Plasma-Enhanced Chemical Vapor Deposition
- Surface Potential Measurement of Carbon Nanotube Field-Effect Transistors Using Kelvin Probe Force Microscopy
- Fabrication of Antigen Sensors Using Carbon Nanotube Field Effect Transistors
- Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
- Effects of Fabrication Process on Current–Voltage Characteristics of Carbon Nanotube Field Effect Transistors
- Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN
- Fabrication Technique for Carbon Nanotube Single-Electron Transistors Using Focused Ion Beam
- Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistors
- Resonant-Tunneling-Injection Photoluminescence of Single InAs Self-Assembled Quantum Dots Embedded in a Thin AlGaAs Barrier
- Position-Controlled Carbon Nanotube Field-Effect Transistors Fabricated by Chemical Vapor Deposition Using Patterned Metal Catalyst
- Comparison of Electrical Characteristics of Metamorphic HEMTs with InP HEMTs and PHEMTs
- Photoresponse of Carbon Nanotube Field-Effect Transistors
- AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4 Gate Insulator
- Growth of mm-Long Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition
- Evidence of Edge Conduction at Nanotube/Metal Contact in Carbon Nanotube Devices
- Fluidic Assembly of Thin GaAs Blocks on Si Substrates
- AlGaN/GaN High Electron Mobility Transistors with Inclined-Gate-Recess Structure
- Fabrication of Short-Range Ordered Nanoholes on Silicon Surfaces by Electron Irradiation
- High-Mobility, Flexible Carbon Nanotube Thin-Film Transistors Fabricated by Transfer and High-Speed Flexographic Printing Techniques
- Carbon-carbon bond formation by use of chloroiodomethane as a C1 unit. I. Formation of chloromethyltriphenylphosphonium iodide, and its application for the Wittig chloromethylenation of aldehydes and ketones.
- Enantiodivergent total syntheses of nanaomycins and their enantiomers, kalafungins.
- Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate
- Suppression of Hysteresis in Carbon Nanotube Field-Effect Transistors: Effect of Contamination Induced by Device Fabrication Process
- High-Mobility, Flexible Carbon Nanotube Thin-Film Transistors Fabricated by Transfer and High-Speed Flexographic Printing Techniques
- Investigation of Interface Charges of High-k Gate Dielectrics and Their Effects on Carbon Nanotube Field-Effect Transistors
- High-Mobility, Flexible Carbon Nanotube Thin-Film Transistors Fabricated by Transfer and High-Speed Flexographic Printing Techniques