Position-Controlled Carbon Nanotube Field-Effect Transistors Fabricated by Chemical Vapor Deposition Using Patterned Metal Catalyst
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概要
- 論文の詳細を見る
Position-controlled carbon nanotube field effect transistors (FETs) have been fabricated by using patterned catalysts and chemical vapor deposition. A double-layer metal of platinum and cobalt was used as the catalyst. The use of a mixture of ethanol and argon as the source gas was effective for obtaining FETs with good characteristics. Coulomb oscillation was observed at room temperature. 76% of the fabricated devices showed FET operation. The characteristics of FETs with metallic nanotubes were improved by applying a high voltage.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-06-15
著者
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Kishimoto Shigeru
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Ohno Yutaka
Department Of Information Science Faculty Of Engineering Kyoto University
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Hiraoka Tatsuki
Department Of Chemistry Nagoya University
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Iwatsuki Shinya
Department Of Quantum Engineering Nagoya University
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Okazaki Toshiya
Department Of Chemistry Nagoya University
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Maezawa Koichi
Department Of Physics School Of Science And Engineering Waseda University:atsugi Electrical Communic
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Mizutani Takashi
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Shinohara Hisanori
Department Of Cardiology And Clinical Research
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Kishimoto Shigeru
Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Hiraoka Tatsuki
Department of Chemistry, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
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Ohno Yutaka
Department of Applied Chemistry, Faculty of Engineering, Tohoku University
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