AlGaN/GaN High Electron Mobility Transistors with Inclined-Gate-Recess Structure
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概要
- 論文の詳細を見る
We have studied an inclined-gate-recess structure in order to clarify the effect of increasing the electric field in the channel. Two-dimensional device simulation has revealed that the electric field and the electron velocity in the channel have increased by the inclined-gate-recess structure, which leads to an improvement of $g_{\text{m}}$. AlGaN/GaN high electron mobility transistors (HEMTs) with inclined-gate-recess have been fabricated. Improved $g_{\text{m}}$ and $ f_{\text{T}}$ have been obtained, which confirms the importance of increasing the electric field in the channel.
- 2006-04-30
著者
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Kishimoto Shigeru
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Maezawa Koichi
Department Of Physics School Of Science And Engineering Waseda University:atsugi Electrical Communic
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Mizutani Takashi
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Ohno Yutaka
Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Maezawa Koichi
Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Ohno Yutaka
Department of Applied Chemistry, Faculty of Engineering, Tohoku University
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Aoi Yuma
Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Kishimoto Shigeru
Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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