Fabrication of Carbon Nanotubes by Slot-Excited Microwave Plasma-Enhanced Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
Carbon nanotubes (CNTs) are fabricated by adopting plasma-enhanced chemical vapor deposition (PECVD) with a planar microwave plasma source. Plasma is produced by a slot antenna at 2.45-GHz microwave injection in CH4/H2 mixture. In this study, it is shown that avoiding the exposure of the substrate to the plasma drastically improves the CNT growth. Furthermore, it is found that the CNT quality can be controlled with the optimization of one of the steps in the catalyst treatment, such as the preheating procedure; the treated catalyst is considered to be unaffected by the heating in the high-density microwave plasma treatment during the CNT growth.
- 2008-07-25
著者
-
Ohno Yutaka
Department Of Information Science Faculty Of Engineering Kyoto University
-
Kojima Yoshihiro
Department Of Chemistry Graduate School Of Science Hiroshima University
-
Kono Satoshi
Department Of Cardiovascular Surgery Nagahama City Hospital
-
Ishijima Tatsuo
Plasma Nanotechnology Research Center Nagoya University
-
Shim Gyu
Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
-
Ishijima Tatsuo
Plasma Nanotechnology Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
-
Kono Satoshi
Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
-
Ohno Yutaka
Department of Applied Chemistry, Faculty of Engineering, Tohoku University
-
SHIM Gyu
Department of Electrical Engineering and Computer Science, Nagoya University
関連論文
- Dechuck Operation of Coulomb Type and Johnsen-Rahbek Type of Electrostatic Chuck Used in Plasma Processing
- Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes
- Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate
- Tunable Field-Effect Transistor Device with Metallofullerene Nanopeapods
- Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
- Fabricated on a GaAs-based Semiconductor-on-Insulator Substrate Using a Spin-On Low-k Dielectric Film
- Electroluminescence in AlGaN/GaN High Electron Mobility Transistors under High Bias Voltage (Short Note)
- Temperature Distribution Measurement in AlGaN/GaN High-Electron-Mobility Transistors by Micro-Raman Scattering Spectroscopy : Semiconductors
- A Verification Method for Formal Requirements Description
- Fabrication of vertically-aligned CNT electrodes using plasma-enhanced CVD for chemical sensors
- Effect of Ultrasonic Irradiation Parameters on the Supercooling Relaxation Behavior of PCM
- High-Speed Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit
- A New Metabolite of Tryptophan, Chromopyrrolic Acid, Produced by Chromobacterium violaceum
- Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n^+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors
- Electroluminescence Measurement of n^+ Self-Alighed Gate GaAs MESFETs
- Electroluminescence Measurement of n Self-Aligned GaAs MESFETs
- Repeated true lumen collapse after repair of descending thoracic aneurysm in chronic type B dissection
- Fine Structure of O^- Kinetic Energy Distribution in RF Plasma and Its Formation Mechanism
- Concurrent LISP and Its Interpreter
- Structures and Dielectric Properties in Thermochromic Nickel(II) Compounds
- A Supporting System for Software Maintenance : Ripple Effect Analysis of Requirements Description Modification
- Development of compact ventricular assist device for chronic use
- Software Design Process: Chrysalis Stage under the Control of Designers
- THE MOTONEURONS INNERVATING THE MUSCULUS LEVATOR PALPEBRAE SUPERIORIS IN THE MONKEY, CAT AND RABBIT
- Study of Electron-Irradiation-Induced Defects in GaP by In-situ Optical Spectroscopy in a Transmission Electron Microscope
- Analysis of polarization by means of polarized cathodoluminescence spectroscopy in a TEM
- Design of Large-Area Surface Wave Plasma Excited by Slotted Waveguide Antennas with Novel Power Divider
- Effect of O- Ion Beam Irradiation during RF-Magnetron Sputtering on Characteristics of CoFeB--MgO Magnetic Tunnel Junctions
- Spin-crossover Change from Gradual to Abrupt Types for an Iron(III) Complex
- Multiple early bile duct carcinoma associated with congenital choledochal cyst
- High-Performance Top-Gate Carbon Nanotube Field-Effect Transistors and Complementary Metal-Oxide-Semiconductor Inverters Realized by Controlling Interface Charges
- Spatial Profile Measurement of SiH3 Radical Flux in SiH4/H2 Microwave Plasma by Modified Appearance Mass Spectrometry
- Thin Single-Walled Carbon Nanotubes with Narrow Diameter Distribution Grown by Cold-Wall Chemical Vapor Deposition Combined with Co Nanoparticle Deposition
- Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
- Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
- Spatial Variation of Negative Oxygen Ion Energy Distribution in RF Magnetron Plasma with Oxide Target
- Atomic Structure of a Defect Colony in Silicon Introduced during Neutron Irradiation in the JOYO Reactor
- Diffusion Process of Interstitial Atoms in an Electron Irradiated InP Studied by Transmission Electron Microscopy
- Photoluminescence Study of Resonant Tunneling Transistor with p^+/n-Junction Gate
- Effects of Sample Volume and Frequency on Ultrasonic Power in Solutions on Sonication
- Microscopic Photoluminescence Study of InAs Single Quantum Dots Grown on (100) GaAs
- Electrical Properties of Carbon Nanotube Field-Effect Transistors with Multiple Channels Measured by Scanning Gate Microscopy
- Fluid Dynamic Assembly of Semiconductor Blocks for Heterogeneous Integration
- Observation of n-Type Conduction in Carbon Nanotube Field-Effect Transistors with Au Contacts in Vacuum (Special Issue : Solid State Devices and Materials (1))
- Estimation of Height of Barrier Formed in Metallic Carbon Nanotube (Special Issue : Solid State Devices and Materials (1))
- Fabrication of Carbon Nanotubes by Slot-Excited Microwave Plasma-Enhanced Chemical Vapor Deposition
- Fabrication of Vertically-Aligned Carbon Nanotube Electrodes Using Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Chemical Sensors
- Surface Potential Measurement of Carbon Nanotube Field-Effect Transistors Using Kelvin Probe Force Microscopy
- Fabrication of Antigen Sensors Using Carbon Nanotube Field Effect Transistors
- Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
- Effects of Fabrication Process on Current–Voltage Characteristics of Carbon Nanotube Field Effect Transistors
- Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN
- Fabrication Technique for Carbon Nanotube Single-Electron Transistors Using Focused Ion Beam
- Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistors
- Resonant-Tunneling-Injection Photoluminescence of Single InAs Self-Assembled Quantum Dots Embedded in a Thin AlGaAs Barrier
- Position-Controlled Carbon Nanotube Field-Effect Transistors Fabricated by Chemical Vapor Deposition Using Patterned Metal Catalyst
- Comparison of Electrical Characteristics of Metamorphic HEMTs with InP HEMTs and PHEMTs
- Photoresponse of Carbon Nanotube Field-Effect Transistors
- AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4 Gate Insulator
- Growth of mm-Long Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition
- Evidence of Edge Conduction at Nanotube/Metal Contact in Carbon Nanotube Devices
- Fluidic Assembly of Thin GaAs Blocks on Si Substrates
- AlGaN/GaN High Electron Mobility Transistors with Inclined-Gate-Recess Structure
- Low-Temperature Growth of Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition
- Fabrication of Short-Range Ordered Nanoholes on Silicon Surfaces by Electron Irradiation
- High-Mobility, Flexible Carbon Nanotube Thin-Film Transistors Fabricated by Transfer and High-Speed Flexographic Printing Techniques
- Plasma Effects on Electrostatic Chuck Characteristics on Capacitive RF Discharge
- Carbon-carbon bond formation by use of chloroiodomethane as a C1 unit. I. Formation of chloromethyltriphenylphosphonium iodide, and its application for the Wittig chloromethylenation of aldehydes and ketones.
- Enantiodivergent total syntheses of nanaomycins and their enantiomers, kalafungins.
- Temporal Analysis of Electrostatic Chuck Characteristics in Inductively Coupled Plasma
- Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate
- Suppression of Hysteresis in Carbon Nanotube Field-Effect Transistors: Effect of Contamination Induced by Device Fabrication Process
- High-Mobility, Flexible Carbon Nanotube Thin-Film Transistors Fabricated by Transfer and High-Speed Flexographic Printing Techniques
- Investigation of Interface Charges of High-k Gate Dielectrics and Their Effects on Carbon Nanotube Field-Effect Transistors
- High-Mobility, Flexible Carbon Nanotube Thin-Film Transistors Fabricated by Transfer and High-Speed Flexographic Printing Techniques