Spatial Profile Measurement of SiH₃ Radical Flux in SiH₄/H₂ Microwave Plasma by Modified Appearance Mass Spectrometry

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概要

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• Appearance mass spectrometry (AMS) is one of the well-known detection techniques for neutral radicals. In this technique, however, radical flux is sometimes underestimated owing to radical loss on the inner surface of the differentially pumped mass spectrometer chamber. To avoid this problem, we propose a modified AMS that enables the evaluation of radical loss. The decay time of neutral radicals inside the mass spectrometer is measured using a compact piezochopper that is installed in front of the mass spectrometer orifice. This technique is applied to the evaluation of SiH₃ radical flux in SiH₄/H₂ microwave plasma.

• 2011-08-25

著者

• Toyoda Hirotaka

  Department Of Electrical Engineering And Computer Science Nagoya University

• Ishijima Tatsuo

  Plasma Nanotechnology Research Center Nagoya University

• Toyoda Hirotaka

  Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya 464-8603, Japan

• Kuroda Toshiyuki

  Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya 464-8603, Japan

• Ikeda Masahira

  Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya 464-8603, Japan

• Ishijima Tatsuo

  Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan

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