Effect of O- Ion Beam Irradiation during RF-Magnetron Sputtering on Characteristics of CoFeB--MgO Magnetic Tunnel Junctions
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概要
- 論文の詳細を見る
The relevance between electrical properties of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) and the crystalline orientation of MgO layer was investigated within a large-scale substrate. The tunnel magnetoresistance characteristics and the resistance-area product in CoFeB/MgO/CoFeB MTJs are degraded by deterioration of the crystalline orientation of MgO layer, which depends on sputtering conditions. That deterioration originates from damage caused by high-energy oxygen negative-ion irradiation during RF-magnetron sputtering of the MgO layer.
- 2011-02-25
著者
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Goto Kazuya
Department Of Applied Chemistry Faculty Of Engineering Kyushu University
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Toyoda Hirotaka
Department Of Electrical Engineering And Computer Science Nagoya University
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Kinoshita Keizo
Device Platforms Research Laboratories Nec Corporation
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Morita Tadashi
Tsukuba Institute For Super Materials Ulvac Inc.
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Ishijima Tatsuo
Plasma Nanotechnology Research Center Nagoya University
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Ohshima Norikazu
Device Platforms Research Laboratories Nec Corporation
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Kinoshita Keizo
Device Platforms Research Laboratories, NEC Corporation, Sagamihara 229-1198, Japan
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Ono Kazunaga
Tsukuba Institute for Super Materials, ULVAC, Inc., Susono, Shizuoka 410-1231, Japan
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Yamamoto Hiroki
Tsukuba Institute for Super Materials, ULVAC, Inc., Susono, Shizuoka 410-1231, Japan
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Toyoda Hirotaka
Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya 464-8603, Japan
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Morita Tadashi
Tsukuba Institute for Super Materials, ULVAC, Inc., Susono, Shizuoka 410-1231, Japan
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Ohshima Norikazu
Device Platforms Research Laboratories, NEC Corporation, Sagamihara 229-1198, Japan
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