Magnetic Properties and Writing Characteristics of Magnetic Clad Lines in Magnetoresistive Random Access Memory Devices
スポンサーリンク
概要
- 論文の詳細を見る
Structural and magnetic properties of magnetic clad lines used for magnetoresistive random access memory (MRAM) devices were analyzed to optimize the clad-line fabrication process. Patterns of 520 nm lines and 280 nm spaces with a depth of 300 nm with magnetic cladding films of Ta/NiFe/Ta were fabricated to characterize the structure and magnetic properties of cladding films by transmission electron microscopy and magnetic measurements. A high susceptibility with a small hysteresis was obtained when a NiFe cladding film highly oriented to fcc (111) was formed perpendicular to the sidewall depth direction. The optimized cladding film was integrated in MRAM cells and we confirmed that the clad lines reduced the flop current of a toggle-MRAM cell by more than 50% compared with a cell having unclad lines. The flop current distribution can be reduced by applying a magnetic field of 12 kOe in the direction of word lines at room temperature. We successfully confirmed writing operation in a 4-Mbit MRAM cell with these optimized magnetic clad lines.
- 2008-05-25
著者
-
SUZUKI Tetsuhiro
Device Platforms Research Laboratories, NEC Corporation
-
Ohshima Norikazu
Device Platforms Research Laboratories Nec Corporation
-
Nebashi Ryusuke
Device Platforms Laboratories Nec Corporation
-
Ohshima Norikazu
Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
-
Hada Hiromitsu
Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
-
Shimura Ken-ichi
Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
-
Miura Sadahiko
Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
-
Suzuki Tetsuhiro
Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
-
Nebashi Ryusuke
Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
関連論文
- Three-Terminal Device Based on the Current-Induced Magnetic Vortex Dynamics with the Magnetic Tunnel Junction
- Electrical Detection of Vortex Core Polarity in Ferromagnetic Disk
- Current-Driven Domain Wall Motion in CoCrPt Wires with Perpendicular Magnetic Anisotropy
- Fine Structure of O^- Kinetic Energy Distribution in RF Plasma and Its Formation Mechanism
- Improvement of Thermal Stability of MRAM Device with SiN Protective Film Deposited by HDP CVD
- Effect of O- Ion Beam Irradiation during RF-Magnetron Sputtering on Characteristics of CoFeB--MgO Magnetic Tunnel Junctions
- Domain Wall Motion Induced by Electric Current in a Perpendicularly Magnetized Co/Ni Nano-Wire
- Control of Domain Wall Position by Electrical Current in Structured Co/Ni Wire with Perpendicular Magnetic Anisotropy
- Single Shot Detection of the Magnetic Domain Wall Motion by Using Tunnel Magnetoresistance Effect
- Shared Write-Selection Transistor Cell and Leakage-Replication Read Scheme for Large Capacity MRAM Macros
- Spatial Variation of Negative Oxygen Ion Energy Distribution in RF Magnetron Plasma with Oxide Target
- Magnetic Properties and Writing Characteristics of Magnetic Clad Lines in Magnetoresistive Random Access Memory Devices