Influence of Oxygen Addition and Wafer Bias Voltage on Bromine Atom Surface Reaction in a HBr/Ar Inductively Coupled Plasma (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
スポンサーリンク
概要
著者
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Fujii Yoshitaka
Department Of Anesthesiology And Critical Care Medicine Tokyo Medical And Dental University School O
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Toyoda Hirotaka
Department Of Electrical Engineering And Computer Science Nagoya University
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Suzuki Keiji
Corporate Manufacturing Engineering Center Toshiba Corporation
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Iino Daiki
Corporate Manufacturing Engineering Center, Toshiba Corporation, Yokohama 235-0017, Japan
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Nojiri Yasuhiro
Corporate Manufacturing Engineering Center, Toshiba Corporation, Yokohama 235-0017, Japan
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Oike Takumi
Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya 464-863, Japan
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