Fabrication of Antigen Sensors Using Carbon Nanotube Field Effect Transistors
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概要
- 論文の詳細を見る
Antigen sensors using carbon nanotube field effect transistors (CNT-FETs) were fabricated. In order to avoid the problem of exposing source and drain electrodes directly to the phosphate buffered saline (PBS) solution, source and drain electrodes were covered with evaporated SiO film. The immobilization of antibodies on the device surface was confirmed by the observation of fluorescence. Drain current in the sensor device was decreased by the antibody–antigen binding, which suggests a potential use of CNT-FETs as antigen sensors.
- 2006-06-30
著者
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Kishimoto Shigeru
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Ohno Yutaka
Department Of Information Science Faculty Of Engineering Kyoto University
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Tani Kentaro
Department Of Quantum Engineering Nagoya University
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Mizutani Takashi
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Honda Hiroyuki
Department Of Anesthesia Niigata City General Hospital
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Ito Hiroshi
Department Neurosurgery Tokyo Medical College
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Okochi Mina
Department Of Biotechnology Graduate School Of Engineering Nagoya University
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Okochi Mina
Department of Chemical Engineering and Biotechnology, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Tani Kentaro
Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Honda Hiroyuki
Department of Chemical Engineering and Biotechnology, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Ohno Yutaka
Department of Applied Chemistry, Faculty of Engineering, Tohoku University
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