Measurement of Contact Potential of GaAs/AlGaAs Heterostructure Using Kelvin Probe Force Microscopy

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概要

• 論文の詳細を見る

• We have shown that the contact potential of i-GaAs/i-AlGaAs heterostructures can be measured using Kelvin probe force microscopy (KFM). The measured contact potential difference between GaAs and AlGaAs increases monotonically with increasing AlAs mole fraction. This dependence does not agree with the model for the ideal interface where the measured contact potential is dominated by the Fermi level which lies in the midgap of bulk materials. The results are explained based on the model of the alignment of charge neutrality level during heterostructure formation.

• 社団法人応用物理学会の論文
• 1999-07-01

著者

• KISHIMOTO Shigeru

  Graduate School of Engineering, Nagoya University

• Maezawa Koichi

  Ntt System Electronics Laboratories:(present) Faculty Of Engineering Nagoya University

• Kishimoto Shigeru

  Department Of Quantum Engineering Nagoya University

• Kishimoto Shigeru

  Department Of Electrical Engineering Faculty Of Engineering Nagoya University

• Usunami Takao

  Department Of Quantum Engineering Nagoya University

• Maezawa K

  Graduate School Of Science And Engineering University Of Toyama

• Mizutani Takashi

  Department Of Electronics Faculty Of Engineering Nagoya University

• Maezawa Koichi

  Department Of Physics School Of Science And Engineering Waseda University:atsugi Electrical Communic

• Mizutani Takashi

  Department Of Electrical Engineering Faculty Of Engineering Nagoya University

• Maezawa Koichi

  Univ. Of Toyama Toyama‐shi Jpn

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