Comparison of Electrical Characteristics of Metamorphic HEMTs with InP HEMTs and PHEMTs
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概要
- 論文の詳細を見る
Metamorphic In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors (MHEMTs) were fabricated on GaAs substrates. A step-graded InAlAs buffer layer was used to relax the lattice mismatch between the active layers and the substrates. The electrical characteristics of the MHEMTs were compared with those of HEMTs on InP substrates (InP HEMTs) and pseudomorphic HEMTs (PHEMTs). Present MHEMTs have exhibited superior characteristics in the low-frequency (LF) noise and side-gate effect to InP HEMTs and PHEMTs. A sufficiently high current-gain cutoff frequency of 210 GHz was obtained for the MHEMTs with gate length of 0.1 μm.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
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TAKAKUSAKI Misao
Toda Plant, Nikko Materials
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NAKATA Hirofumi
Toda Plant, Nikko Materials
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Kishimoto Shigeru
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Ohno Yutaka
Department Of Information Science Faculty Of Engineering Kyoto University
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Kawada Kenji
Department Of Clinical Oncology And Chemotherapy Nagoya University Hospital
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Maezawa Koichi
Department Of Physics School Of Science And Engineering Waseda University:atsugi Electrical Communic
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Mizutani Takashi
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Takakusaki Misao
Toda Plant, Nikko Materials, 3-17-35 Niizo-Minami, Toda-shi, Saitama 335-8502, Japan
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Nakata Hirofumi
Toda Plant, Nikko Materials, 3-17-35 Niizo-Minami, Toda-shi, Saitama 335-8502, Japan
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Kawada Kenji
Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Ohno Yutaka
Department of Applied Chemistry, Faculty of Engineering, Tohoku University
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