Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN
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概要
- 論文の詳細を見る
Current-voltage characteristics of micro-Schottky contacts fabricated on Epitaxial lateral overgrowth (ELO) GaN have been measured. The obtained characteristics are classified into two groups; good contacts with small ideality factor ($n$-value) and poor contacts with large $n$-value. By comparing the distribution of $I$-$V$ characteristics of the micro-Schottky contact array with the distribution of dislocations revealed by molten KOH etching, it was concluded that the dislocations are not responsible for the poor $I$-$V$ characteristics of the Schottky contacts. Regarding the origin of the poor $I$-$V$ characteristics, the high doping density area formed at the top surface of the as-grown wafer was suggested.
- 2003-04-15
著者
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KUMADA Keiichiro
Department of Quantum Engineering, Graduate School of Engineering, Nagoya University
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Kishimoto Shigeru
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Ohno Yutaka
Department Of Information Science Faculty Of Engineering Kyoto University
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Murata Tomohiro
Department Of Cardiology And Nephrology Mie University Graduate School Of Medicine
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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Maezawa Koichi
Department Of Physics School Of Science And Engineering Waseda University:atsugi Electrical Communic
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Mizutani Takashi
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Maezawa Koichi
Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 Japan
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Mizutani Takashi
Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 Japan
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Kishimoto Shigeru
Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 Japan
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Sawaki Nobuhiko
Department of Electronics, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 Japan
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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Kumada Keiichiro
Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 Japan
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Ohno Yutaka
Department of Applied Chemistry, Faculty of Engineering, Tohoku University
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