Concurrent LISP and Its Interpreter

スポンサーリンク

概要

• 論文の詳細を見る

• In the research field of artificial intelligence, many languages have been developed based on LISP, such as PLANNER, CONNIVER and so on. They have been developed to give users many useful facilities, especially for describing flexible control structures. Backtracking and coroutine facilities are typical ones introduced into these languages. Compared with backtracking and coroutine facilities, multi-process description facilities are considered to be a better alternative for writing well-structured programs. This paper describes Concurrent LISP, a new concurrent programming language based on LISP. Concurrent LISP is designed to provide simple and flexible facilities for multi-process description without changing the original language features of LISP. This paper also describes the Concurrent LISP interpreter which has been implemented on a FACOM M-200 at the Data Processing Center of Kyoto University.

• 一般社団法人情報処理学会の論文
• 1982-02-25

著者

• OHNO Yutaka

  Department of Quantum Engineering, Nagoya University

• SUGIMOTO Shigeo

  Department of Applied Physics, National Defense Academy

• Ohno Yutaka

  Department Of Information Science Kyoto University

• Ohno Yutaka

  Department Of Information Science Faculty Of Engineering Kyoto University

• TABATA KOICHI

  Educational Center for Information Processing, Kyoto University

• Tabata Koichi

  Educational Center For Information Processing Kyoto University

• Sugimoto Shigeo

  Department Of Information Science Kyoto University

• OHNO YUTAKA

  Department of Information Science, Kyoto University

関連論文

• Suppression of Hysteresis in Carbon Nanotube Field-Effect Transistors : Effect of Contamination Induced by Device Fabrication Process
• Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes
• Fabrication of Antigen Sensors Using Carbon Nanotube Field Effect Transistors
• Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate
• Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
• Effects of Fabrication Process on Current-Voltage Characteristics of Carbon Nanotube Field Effect Transistors
• Photoresponse of Carbon Nanotube Field-Effect Transistors
• Growth of mm-Long Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition
• Tunable Field-Effect Transistor Device with Metallofullerene Nanopeapods
• Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
• Fluid Dynamic Assembly of Semiconductor Blocks for Heterogeneous Integration
• Fabrication Technique for Carbon Nanotube Single-Electron Transistors Using Focused Ion Beam
• Fabricated on a GaAs-based Semiconductor-on-Insulator Substrate Using a Spin-On Low-k Dielectric Film
• Position-Controlled Carbon Nanotube Field-Effect Transistors Fabricated by Chemical Vapor Deposition Using Patterned Metal Catalyst
• Electroluminescence in AlGaN/GaN High Electron Mobility Transistors under High Bias Voltage (Short Note)
• Temperature Distribution Measurement in AlGaN/GaN High-Electron-Mobility Transistors by Micro-Raman Scattering Spectroscopy : Semiconductors
• Effects of Acoustic Interaction between Transducers in Water on Active Sound Power Reduction
• A Verification Method for Formal Requirements Description
• AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si_3N_4 Gate Insulator
• Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN
• Fluidic Assembly of Thin GaAs Blocks on Si Substrates
• Comparison of Electrical Characteristics of Metamorphic HEMTs with InP HEMTs and PHEMTs
• Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistors
• High-Speed Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit
• Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n^+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors
• Electroluminescence Measurement of n^+ Self-Alighed Gate GaAs MESFETs
• Electroluminescence Measurement of n Self-Aligned GaAs MESFETs
• Concurrent LISP and Its Interpreter
• A Supporting System for Software Maintenance : Ripple Effect Analysis of Requirements Description Modification
• Software Design Process: Chrysalis Stage under the Control of Designers
• Fabrication of Short-Range Ordered Nanoholes on Silicon Surfaces by Electron Irradiation
• Study of Electron-Irradiation-Induced Defects in GaP by In-situ Optical Spectroscopy in a Transmission Electron Microscope
• Analysis of polarization by means of polarized cathodoluminescence spectroscopy in a TEM
• High-Performance Top-Gate Carbon Nanotube Field-Effect Transistors and Complementary Metal-Oxide-Semiconductor Inverters Realized by Controlling Interface Charges
• Thin Single-Walled Carbon Nanotubes with Narrow Diameter Distribution Grown by Cold-Wall Chemical Vapor Deposition Combined with Co Nanoparticle Deposition
• Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
• Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
• Atomic Structure of a Defect Colony in Silicon Introduced during Neutron Irradiation in the JOYO Reactor
• Diffusion Process of Interstitial Atoms in an Electron Irradiated InP Studied by Transmission Electron Microscopy
• Photoluminescence Study of Resonant Tunneling Transistor with p^+/n-Junction Gate
• Microscopic Photoluminescence Study of InAs Single Quantum Dots Grown on (100) GaAs
• Electrical Properties of Carbon Nanotube Field-Effect Transistors with Multiple Channels Measured by Scanning Gate Microscopy
• Fluid Dynamic Assembly of Semiconductor Blocks for Heterogeneous Integration
• Fabrication of Carbon Nanotubes by Slot-Excited Microwave Plasma-Enhanced Chemical Vapor Deposition
• Surface Potential Measurement of Carbon Nanotube Field-Effect Transistors Using Kelvin Probe Force Microscopy
• Fabrication of Antigen Sensors Using Carbon Nanotube Field Effect Transistors
• Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
• Effects of Fabrication Process on Current–Voltage Characteristics of Carbon Nanotube Field Effect Transistors
• Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN
• Fabrication Technique for Carbon Nanotube Single-Electron Transistors Using Focused Ion Beam
• Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistors
• Resonant-Tunneling-Injection Photoluminescence of Single InAs Self-Assembled Quantum Dots Embedded in a Thin AlGaAs Barrier
• Position-Controlled Carbon Nanotube Field-Effect Transistors Fabricated by Chemical Vapor Deposition Using Patterned Metal Catalyst
• Comparison of Electrical Characteristics of Metamorphic HEMTs with InP HEMTs and PHEMTs
• Photoresponse of Carbon Nanotube Field-Effect Transistors
• AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4 Gate Insulator
• Growth of mm-Long Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition
• Evidence of Edge Conduction at Nanotube/Metal Contact in Carbon Nanotube Devices
• Fluidic Assembly of Thin GaAs Blocks on Si Substrates
• Fabrication of Short-Range Ordered Nanoholes on Silicon Surfaces by Electron Irradiation

もっと見る 閉じる

スポンサーリンク