Fabrication of Short-Range Ordered Nanoholes on Silicon Surfaces by Electron Irradiation
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-01-15
著者
-
Takeda Seiji
Department of Materials Science, Faculty of Science Hiroshima University
-
IIJIMA Sumio
Fundamental Research Laboratories, NEC Corporation
-
OHNO Yutaka
Department of Quantum Engineering, Nagoya University
-
Ohno Yutaka
Department Of Physics Graduate School Of Science Osaka University
-
ICHIHASHI Toshinari
Fundamental Research Laboratories, NEC Corporation
関連論文
- Ab-initio Calculation of Si-K and Si-L ELNES Edges in an Extended Inactive Defect Model of Crystalline Silicon
- New Polytypes in the Co-rich Sm-Co system
- Large (6°) Off-Angle Effects on Sublattice Ordering and Band-Gap Energy in Ga_In_P Grown on (001) GaAs Substrates
- Nonexistence of Long-Range Order in Ga_In_P Epitaxial Layers Grown on (111)B and (110) GaAs Substrates : Semiconductors and Semiconductor Devices
- Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase Epitaxy : Semiconductors and Semiconductor Devices
- Suppression of Hysteresis in Carbon Nanotube Field-Effect Transistors : Effect of Contamination Induced by Device Fabrication Process
- Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes
- Fabrication of Antigen Sensors Using Carbon Nanotube Field Effect Transistors
- Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate
- Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
- Effects of Fabrication Process on Current-Voltage Characteristics of Carbon Nanotube Field Effect Transistors
- Photoresponse of Carbon Nanotube Field-Effect Transistors
- Growth of mm-Long Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition
- Tunable Field-Effect Transistor Device with Metallofullerene Nanopeapods
- Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
- Fluid Dynamic Assembly of Semiconductor Blocks for Heterogeneous Integration
- Fabrication Technique for Carbon Nanotube Single-Electron Transistors Using Focused Ion Beam
- Fabricated on a GaAs-based Semiconductor-on-Insulator Substrate Using a Spin-On Low-k Dielectric Film
- Position-Controlled Carbon Nanotube Field-Effect Transistors Fabricated by Chemical Vapor Deposition Using Patterned Metal Catalyst
- Electroluminescence in AlGaN/GaN High Electron Mobility Transistors under High Bias Voltage (Short Note)
- Temperature Distribution Measurement in AlGaN/GaN High-Electron-Mobility Transistors by Micro-Raman Scattering Spectroscopy : Semiconductors
- P-Type Doping Effects on Band-Gap Energy for Ga_In_P Grown by Metalorganic Vapor Phase Epitaxy : Semiconductors and Semiconductor Devices
- A Verification Method for Formal Requirements Description
- AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si_3N_4 Gate Insulator
- Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN
- Fluidic Assembly of Thin GaAs Blocks on Si Substrates
- Comparison of Electrical Characteristics of Metamorphic HEMTs with InP HEMTs and PHEMTs
- Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistors
- Silicon Nanoneedles Grown by a Simple Thermal Treatment Using Metal-Sulfur Catalysts : Short Note
- High-Speed Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit
- Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n^+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors
- Electroluminescence Measurement of n^+ Self-Alighed Gate GaAs MESFETs
- Electroluminescence Measurement of n Self-Aligned GaAs MESFETs
- Concurrent LISP and Its Interpreter
- A Supporting System for Software Maintenance : Ripple Effect Analysis of Requirements Description Modification
- Software Design Process: Chrysalis Stage under the Control of Designers
- Fabrication of Short-Range Ordered Nanoholes on Silicon Surfaces by Electron Irradiation
- VAJ/GFA1/CLO is Involved in the Directional Control of Floral Organ Growth
- Study of Electron-Irradiation-Induced Defects in GaP by In-situ Optical Spectroscopy in a Transmission Electron Microscope
- Analysis of polarization by means of polarized cathodoluminescence spectroscopy in a TEM
- Carbon-Nanotube Field-Effect Transistors with Very High Intrinsic Transconductance
- Atomic Arrangement in a Triple-period A-type Ordered GaInP Layer Grown with Sb Addition during Metal Organic Vapor Phase Epitaxy Observed by Cross Sectional Scanning Tunneling Microscope
- High-Performance Top-Gate Carbon Nanotube Field-Effect Transistors and Complementary Metal-Oxide-Semiconductor Inverters Realized by Controlling Interface Charges
- Observation of Triple-Period-A Type Atomic Ordering in Sb-Doped Ga_In_P Alloys
- Novel Process for Visible Light Emission from Si Prepared by Ion Irradiation
- Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
- Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
- "Incipient Orthorhombic" Phase in Ba_2YCu_3O_ Ctystals : Electrical Properties of Condensed Matter