Ab-initio Calculation of Si-K and Si-L ELNES Edges in an Extended Inactive Defect Model of Crystalline Silicon
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概要
- 論文の詳細を見る
- 2002-07-01
著者
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Chen Yu
Department Of Radiation Oncology Mackay Memorial Hospital
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Ching Wai-yim
Department Of Physics University Of Missouri-kansas City
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Chen Yu
Department Of Mechanical Engineering National Taipei University Of Technology
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Takeda Seiji
Department of Materials Science, Faculty of Science Hiroshima University
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MO Shang-Di
Department of Physics, University of Missouri-Kansas City
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KOHYAMA Masanori
Interface Science Research Group, Special Division of Green Life Technology, National Institute of A
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KOHNO Hideo
Department of Physics, Osaka University
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Kohyama M
Research Institute For Ubiquitous Energy Devices National Institute Of Advanced Industrial Science A
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Mo Shang-di
Department Of Physics University Of Missouri-kansas City
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Kohno Hideo
Department Of Physics Osaka University
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Kohno Hideo
Department Of Earth And Space Science Faculty Of Science Osaka University
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Takada Seiji
Department Of Physics Osaka University
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Takeda Seiji
Department Of Botany Graduate School Of Science Kyoto University
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Kohyama Masanori
Interface Science Research Group National Institute Of Advanced Industrial Science And Technology (a
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Chen Yu
Department Of Chemistry Graduate School Of Science Osaka University
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Chen Yu
Department Of Chemical Biology Ernest Mario School Of Pharmacy Rutgers The State University Of New Jersey
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Chen Yu
Department And Graduate School Of Physical Education National Taiwan College Of Physical Education
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KOHYAMA Masanori
Department of Material Physics, Osaka National Research Institute
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