Fabricating p–n Structures by Growing Highly Doped Si Nanoneedles on Low Doped Si Substrates via Fully Self-Organized Process
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概要
- 論文の詳細を見る
Highly doped Si needles are grown on a low doped Si substrate that has an opposite polarity to the needles via a sulfur-assisted process using Au catalyst particles. By using a micromanipulator system in a scanning electron microscope, individual needles are probed, and current–voltage curves are measured. The curves clearly show rectification.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2007-08-15
著者
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Kohno Hideo
Department Of Earth And Space Science Faculty Of Science Osaka University
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Takeda Junichi
Department Of Neurosurgery Kansai Medical University Hirakata Hospital
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Takeda Seiji
Department Of Botany Graduate School Of Science Kyoto University
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Takeda Junichi
Department of Physics, Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043, Japan
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