Fabrication of Short-Range Ordered Nanoholes on Silicon Surfaces by Electron Irradiation

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概要

• 論文の詳細を見る

• Silicon surface nanoholes, which are small pits introduced spontaneously on the electron exit surfaces of silicon foils by electron irradiation, distribute orderly in a short range. The nearest-neighbor distance and mean opening area of the nanoholes exhibit an Arrhenius-like behavior at high temperatures. The formation mechanism is discussed in terms of the migration of surface vacancies under electron irradiation conditions, and the activation energy of the migration is estimated to be $0.3\pm 0.04$ eV.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-01-15

著者

• Iijima Sumio

  Fundamental Research Laboratories Nec Corporation

• Ohno Yutaka

  Department Of Information Science Faculty Of Engineering Kyoto University

• Takeda Seiji

  Department Of Botany Graduate School Of Science Kyoto University

• Ichihashi Toshinari

  Fundamental and Environmental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan

• Takeda Seiji

  Department of Physics, Graduate School of Science, Osaka University, 1-1 Machikane-yama, Toyonaka, Osaka 560-0043, Japan

• Ohno Yutaka

  Department of Applied Chemistry, Faculty of Engineering, Tohoku University

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