Influence of Oxygen upon Radiation Durability of SiN X-Ray Mask Membranes : Lithography Technology
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-01-31
著者
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Oizumi H
Hitachi Ltd. Tokyo Jpn
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Oizumi Hiroaki
Central Research Laboratory Hitachi Ltd.
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Oizumi H
Aset Euvl Lab. Kanagawa Jpn
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Oizumi Hiroaki
Sortec Corporation
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MOCHIJI Kozo
Central Research Laboratory, Hitachi Ltd.
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Iijima S
Fundamental Research Laboratories Nec Corporation
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Iijima Sumio
Fundamental Research Laboratories Nec Corporation
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IIJIMA Shinpei
Central Research Laboratory, Hitachi Ltd
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Iijima Shinpei
Central Research Laboratory Hitachi Ltd
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Mochiji K
Joint Res. Center For Atom Technol. Angstrom Technol. Partnership(jrcat‐atp) Ibaraki Jpn
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Mochiji Kozo
Central Research Laboratory Hitachi Ltd.
関連論文
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- Polymer Dissolution Characteristics of Radiation-Induced Grafted Resist in X-Ray Lithography
- High-Quality Carbon-Doped Boron Nitride Membrane for X-Ray Lithography Mask
- Electroplated Reflection Masks for Soft X-Ray Projection Lithography
- Resist Performance in 5 nm Soft X-Ray Projection Lithography
- Reduction Imaging at 4.5 nm with Schwarzschild Optics
- Fabrication of 0.1μm Line-and-Space Patterns using Soft X-Ray Reduction Lithography
- Sub-0.1 μm Resist Patterning in Soft X-Ray (13 nm) Projection Lithography
- Large (6°) Off-Angle Effects on Sublattice Ordering and Band-Gap Energy in Ga_In_P Grown on (001) GaAs Substrates
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- Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase Epitaxy : Semiconductors and Semiconductor Devices
- P-Type Doping Effects on Band-Gap Energy for Ga_In_P Grown by Metalorganic Vapor Phase Epitaxy : Semiconductors and Semiconductor Devices
- Ring-Field Extreme Ultraviolet Exposure System Using Aspherical Mirrors
- Influence of Oxygen upon Radiation Durability of SiN X-Ray Mask Membranes : Lithography Technology
- Influence of Oxygen upon Radiation Durability of SiN X-ray Mask Membranes
- F-K XANES Studies of Alkali Fluorides
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