High-Quality Carbon-Doped Boron Nitride Membrane for X-Ray Lithography Mask

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Selective Generation of Defects in Polydiacetylene Langmuir-Blodgett Films on Si Substrates as Studied by X-Ray Photoelectron Spectroscopy
Polymer Dissolution Characteristics of Radiation-Induced Grafted Resist in X-Ray Lithography
High-Quality Carbon-Doped Boron Nitride Membrane for X-Ray Lithography Mask
In-Situ RHEED Monitoring of Hydrogen Plasma Cleaning on Semiconductor Surfaces : Beam-Induced Physics and Chemistry
In-Situ RHEED Monitoring of Hydrogen Plasma Cleaning on Semiconductor Surfaces
Incidence Angle Dependence in Hydrogen Plasma Processing of Semiconductor Surfaces : Beam Induced Physics and Chemistry
Ring-Field Extreme Ultraviolet Exposure System Using Aspherical Mirrors
Influence of Oxygen upon Radiation Durability of SiN X-Ray Mask Membranes : Lithography Technology
Influence of Oxygen upon Radiation Durability of SiN X-ray Mask Membranes
X-Ray Mask Technology Utilizing an Optical Stepper
Positive Charge Generation at a SiO_2/Si Interface due to Bombardment with Metastable Atoms
Thermal and Ion-Induced Reactions on a Chlorine-Adsorbed GaAs (100) Surface Studied by Metastable-Atom De-excitation Electron Spectroscopy
Surface Reaction Induced by Multiply-Charged Ions
Photon-Stimulated Ion Desorption from Semiconductor Surfaces
Exchange Anisotropy of CrN_x/FeN_y/CrN_x Trilayer Thin Films Prepared by Reactive Sputtering
Structural Properties of Amorphous Carbon Nitride Films Prepared by Reactive RF-Magnetron Sputtering
X-ray Mask Technology utilizing an Optical Stepper : X-Ray Lithography
Positron Annihilations Associated with Defects in Plastically Deformed Si
Charge State Dependences of Positron Trapping Rates Associated with Divacancies and Vacancy-Phosphorus Pairs in Si
Minimization of X-Ray Mask Distortion by Two-Dimensional Finite Element Method Simulation : Lithography Technology
Minimization of X-Ray Mask Distortion by Two-Dimensional Finite Element Method Simulation
Trapping and Low-Energy Extraction of Photodissociated Ions of SF_6
Titanium Nitride Thin Films Epitaxially Grown by N-Implantation
Nitriding of Evaporated-Ti Thin Films by Ion Implantation
Deposition of wsi_x Films from Preactivated Mixture of WF_6/SiH_4
Epitaxial Growth of Vanadium Films Evaporated on NaCl Substrates
Spontaneous Hydrogenation of Ti Films Evaporated on NaCl Substrates I
Desorption of Ga and As Atoms from GaAs Surface Induced by Slow Multiply Charged Ar Ions
Small-Angle Scattering from Irradiated Glassy Carbon
8p-S-8 Positron 2D-ACAR of Diamond, Si and Ge : First-Principles Calculation and Experiments
Effect of Oxygen Impurities on Positronium Formation in Voids of Vanadium
Electron Beam Mask Fabrication for MOSLSI's with 1.5 μm Design Rule : A-1: ADVANCED LITHOGRAPHY AND PROCESS
Resolution Limitation of Proximity X-Ray Lithography Determined by Waveguide Effect
Evaluation of Hydrogenation on Semiconductor Surfaces Treated with Hydrogen-Plasma Beam Excited by Electron Cyclotron Resonance : Beam Induced Physics and Chemistry
Evaluation of Hydrogenation on Semiconductor Surfaces Treated with Hydrogen-Plasma Beam Excited by Electron Cyclotron Resonance
Decomposition Mechanism of Triethyl-Arsenic on a GaAs Surface for Metalorganic Molecular-Beam Epitaxy : Role of Hydrogen Radicals
Mass Spectrometric Study and Modeling of Decomposition Process of Tris-Dimethylamino-Arsenic on (001) GaAs Surface
Structural Properties of Amorphous Carbon Nitride Films Prepared by Reactive RF-Magnetron Sputtering
Positron Annihilation in Neutron- and Electron-Irradiated Silica Glass
The Effects of Secondary Electrons form a Silion Substrate on SR X-Ray Lithography : Lithography Technology
The Effects of Secondary Electrons from a Silion Substrate on SR X-Ray Lithography

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