Desorption of Ga and As Atoms from GaAs Surface Induced by Slow Multiply Charged Ar Ions

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概要

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• A reaction on a semiconductor surface induced by the potential energy of slow multiply charged ions (MCIs) has been investigated. By using an Einzel-type ion decelerator, beams of slow MCIs (Ar^<q+>;q≤10) with an ion current of several tens of nanoamperes and with the kinetic energy (E_k) of 30×q eV were produced. Irradiating a GaAs surface with the slow Ar^<q+> induced the desorption of Ga and As atoms, and this desorption was almost independent of the E_k but strongly dependent on the q; that is, on the potential energy (E_p) of the Ar^<q+>. The effect of E_p on atom desorption was analyzed quantitatively in terms of a model based on the Coulomb repulsion between holes generated on the surface through neutralization of the MCIs.

• 社団法人応用物理学会の論文
• 1995-12-30

著者

• OHTANI Shunsuke

  The University of Electro-Communications

• 佐藤 知矢

  Department Of Physics Faculty Of Science Shinshu University

• OHTANI Shunsuke

  Institute for Laser Science, The University of Electro-Communications

• KOBAYASHI Nobuo

  Department of Physics,Faculty of Science,Tokyo Metropolitan University

• Tawara H

  Max Planck Inst. Nuclear Physics Saupfercheckweg Deu

• SHIMIZU Hiroshi

  Institute of Seismology and Volcanology, Kyushu University

• Noto K

  Institute For Materials Research Tohoku University

• MOCHIJI Kozo

  Central Research Laboratory, Hitachi Ltd.

• Kobayashi N

  Tohoku Univ. Sendai Jpn

• KATO Yoshihiro

  Department of Biochemistry and Engineering, Faculty of Engineering, Tohoku University

• Kobayashi N

  Institute For Materials Research Tohoku University Katahira

• ITABASHI Naoshi

  Central Research Laboratory, Hitachi, Ltd.

• Ohtani S

  Nagoya Univ. Nagoya Jpn

• Ohtani Shunsuke

  Institute For Laser Science University Of Electro-communications

• Ohtani Shunsuke

  Division Of Natural Sciences International Christian University Institute For Laser Science Universi

• Ohtani Shunsuke

  Institute For Laser Science The University Of Electro-communications

• Shunsuke Ohtani

  Cold Trapped Ions Project Icorp Japan Science And Technology Corporation (jst)

• Kobayashi Nobuo

  Department Of Physics Faculty Of Science Tokyo Metropolitan University

• Mochiji Kozo

  Central Research Laboratory Hitachi Ltd.

• Mochiji Kozo

  Central Research Laboratory Hitachi Ltd.:presto Research Development Corporation Of Japan (jrdc)

• Obara Satoshi

  Photon Factory Institute For Material Structure Science

• Tanuma H

  Department Of Physics Tokyo Metropolitan University

• Ohtani Shunsuke

  Cold Trapped Ion Project Japan Science & Technology Cooperation

• Itabashi Naoshi

  Central Research Laboratory Hitachi Ltd.

• TANUMA Hajime

  Department of Physics, Tokyo Metropolitan University

• Kobayashi Nobuo

  Department Of Electronic Engineering Faculty Of Engineering Yamanashi University

• Shimizu Hiroshi

  Institute Of Seismology And Volcanology Kyushu University

• Ohtani Soichiro

  Department Of Physics Faculty Of Science Hokkaido University:electronics Laboratory Nippon Mining Co

• Kobayashi Nobuo

  Deparment Of Physics Faculty Of Science Tokyo Metropolitan University

• Kato Y

  Department Of Physics Tokyo Metropolitan University

• Kato Yoshihiro

  Department Of Biochemistry And Engineering Faculty Of Engineering Tohoku University

• Kobayashi Norio

  Faculty Of Engineering Iwate University

• Ohtani Shunsuke

  Institute for Laser Science (ILS), University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan

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