New Dry Surface-Imaging Process for X-Ray Lithography

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-03-15

著者

• MATSUMOTO Mutsuyoshi

  National Institute of Advanced Industrial Science and Technology

• Oizumi H

  Hitachi Ltd. Tokyo Jpn

• Oizumi H

  Aset Euvl Lab. Kanagawa Jpn

• Oizumi Hiroaki

  Sortec Corporation

• Soga Tetsuo

  Department Of Electronics Faculty Of Engineering Nagoya University

• Takeda E

  Department Of Clinical Nutrition University Of Tokushima Graduate School

• Takeda E

  Hitachi Ltd. Tokyo Jpn

• Takeda E

  Univ. Of Tokushima Graduate School Tokushima Jpn

• Takeda Eiji

  Central Research Laboratory Hitachi Ltd.

• Takeda Eiji

  Central Research Laboratory Hitachi Lid.

• TACHIBANA Hiroaki

  National Institute of Materials and Chemical Research

• OGAWA Taro

  Central Research Laboratory, Hitachi Ltd.

• Yamaguchi A

  Hitachi Ltd. Tokyo Jpn

• Yamaguchi Atsumi

  Ulsi Development Center Mitsubishi Electric Corporation

• Soga T

  Nagoya Inst. Technol. Nagoya Jpn

• MATSUMOTO Mitsuhiro

  Nara Prefectural Institute of Public Health

• SOGA Takashi

  Central Research Laboratory, Hitachi, Ltd.

• YAMAGUCHI Atsuko

  Central Research Laboratory, Hitachi, Ltd.

• Yamaguchi Atsuko

  Central Research Laboratory Hitachi Ltd.

• Yamaguchi Atsuko

  Association Of Super-advanced Electronics Technologies:(present Address)hitachi Central Laboratory

• Matsumoto Michio

  Faculty Of Engineering Yamanashi University

• Yamaguchi A

  Sumitomo Electric Ind. Ltd. Yokohama Jpn

• Matsumoto M

  National Inst. Materials And Chemical Res. Tsukuba Jpn

• Ogawa Taro

  Central Research Laboratory Hitachi Ltd.

• Soga Takashi

  Central Research Laboratory Hitachi Limited

• Matsumoto M

  Nara Prefectural Institute Of Public Health

• Takeda Eiji

  Central Research Laboratory

• Takeda Eiji

  徳島大学 病態栄養

• Tachibana Hiroaki

  National Institute of Advanced Industrial Science and Technology (AIST)

• Matsumoto Mutsuyoshi

  National Chemical Laboratory for Industry

関連論文

• Synthesis of α,ω-Bissilanes with Fluorocarbon Chain and Surface Structures of Solid Surfaces Modified with the Silanes
• Structural Comparison between Ge and GaAs Films Grown by Molecular Beam Epitaxy on Si Substrate : Short Note
• Direct Bonding of Epitaxial GaAs Film on Si Substrate With Improved Optical Properties : Structure and Mechanical and Thermal Properties of Condensed Matter
• Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
• Fabrication of a TiO_2-Based Solid-State Cell with an Organic Polymer as a Sensitizer : Optical Properties of Condensed Matter
• Effect of Radio Frequency Power on the Properties of Hydrogenated Amorphous Carbon Films Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition
• Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
• Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers
• Initial Condition and Calculation Method for the Numerical Simulation of LPE
• Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
• Theoretical Calculation of Photoabsorption of Various Polymers in an Extreme Ultraviolet Region
• Theoretical Estimation of Absorption Coefficients of Various Polymers at 13 nm
• Growth of cupric oxide nanostructure by thermal oxidation of copper (シリコン材料・デバイス)
• An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (シリコン材料・デバイス)
• Growth of cupric oxide nanostructure by thermal oxidation of copper (電子デバイス)
• An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (電子デバイス)
• Growth of cupric oxide nanostructure by thermal oxidation of copper (電子部品・材料)
• An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (電子部品・材料)
• Effects of Homoepitaxial GaAs/GaAs and Heteroepitaxial GaAs/Si Solar Cells after 1MeV Electron Irradiation for Space Application
• Annealing Temperature Effects on Synthesis of n-TiO_2/dye/p-CuI Solid-State Solar Cells
• The physical and micro structural properties of PECVD grown amorphous carbon films on the contribution to n-C:P/p-Si solar cells
• The annealing temperature effects on the synthesis of n-TiO_2/dye/p-CuI solid state solar cells
• 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
• 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
• 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
• The Deposition of a-C : H Films by Pulsed Laser Ablation
• Photovoltaic Properties of Boron-Incorporated Amorphous Carbon on n-Si Heterojunction Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition Using Trimethylboron
• Photo-induced Orientational Change in Langmuir-Blodgett Films of Azobenzene Complexed with Polyviologen
• Functionalized Carbon Nanotubes for Mixed Matrix Membrane
• Salt Formation in the Langmuir - Blodgett Films of Arachidic Acid Mixed with Amphiphilic Ammonium Ions and an Amphiphilic Amine
• Influence of Catalyst Preparation on Synthesis of Multi-Walled Carbon Nanotubes
• High-Efficiency Monolithic Three-Terminal GaAs/Si Tendem Solar Cells Fabricated by Metalorganic Chemical Vapor Deposition
• Morphological Control of Ion-Induced Carbon Nanofibers and Their Field Emission Properties
• Low-Temperature Fabrication of Ion-Induced Ge Nanostructures : Effect of Simultaneous Al Supply
• Electroplated Reflection Masks for Soft X-Ray Projection Lithography
• Resist Performance in 5 nm Soft X-Ray Projection Lithography
• Reduction Imaging at 4.5 nm with Schwarzschild Optics
• Fabrication of 0.1μm Line-and-Space Patterns using Soft X-Ray Reduction Lithography
• Sub-0.1 μm Resist Patterning in Soft X-Ray (13 nm) Projection Lithography
• GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
• Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
• Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
• Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
• MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
• MOCVD Growth of GaAs_P_ on Si Substrate
• AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
• Mechnism of MOCVD Growth for GaAs and AlAs
• Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
• Ring-Field Extreme Ultraviolet Exposure System Using Aspherical Mirrors
• Influence of Oxygen upon Radiation Durability of SiN X-Ray Mask Membranes : Lithography Technology
• Influence of Oxygen upon Radiation Durability of SiN X-ray Mask Membranes
• F-K XANES Studies of Alkali Fluorides
• F-K XANES Studies of Alkaline-Earth Fluorides
• Optical Spectra of Silicon Oligomers
• Optical Properties of Branched Silicon Polymers
• Wet-silylation Process for X-ray and EUV Lithographies
• X-Ray Mask Technology Utilizing an Optical Stepper
• Negative Tone Dry Development of Si-Containing Resists by Laser Ablation
• X-Ray Lithography with a Wet-Silylated and Dry-Developed Resist
• Prevention of Resist Pattern Collapse by Flood Exposure during Rinse Process
• New Dry Surface-Imaging Process for X-Ray Lithography
• Simulation of AZ-PN100 Resist Pattern Fluctuation in X-Ray Lithography, Including Synchrotron Beam Polarization
• Freeze-Drying Process to Avoid Resist Pattern Collapse
• X-ray Mask Technology utilizing an Optical Stepper : X-Ray Lithography
• A Slab-Optical-Waveguide Absorption Spectroscopy of Langmuir-Blodgett Films with a White Excitation Source
• Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
• Etching Technique to Reveal Dislocations in Thin GaAs Films Grown on Si Substrates : Condensed Matter
• Photon-Stimulated Ion Desorption Measurement of Organosilicon Resist Reactions in Extreme Ultraviolet Lithography
• J - aggregate Formation in Single - Layer Amphiphilic Spiropyran Langmuir - Blodgett Films
• ESR Study on Langmuir-Blodgett Films of Azobenzene-Containing Alkylpyridinium-Tetracyanoquinodimethane 1:2 Complexes
• Diamond Synthesized at Room Temperature by Pulsed Laser Deposition in Vacuum
• Stress and Strain of GaAs on Si Grown by MOCVD Using Strained Superlattice Intermediate Layers and a Two-Step Growth Method
• Synthesis of Carbon Nanofibers from Carbon Particles by Ultrasonic Spray Pyrolysis of Ethanol
• Polarized Reflectance Spectroscopy and Spectroscopic Ellipsomentry Determination of the Optical Anisotropy of Gallium nitride on Sapphire
• Minimization of X-Ray Mask Distortion by Two-Dimensional Finite Element Method Simulation : Lithography Technology
• Minimization of X-Ray Mask Distortion by Two-Dimensional Finite Element Method Simulation
• Photoluminescence Studies of Hydrogen-Passivated Al_Ga_As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
• Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
• Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy
• Crystal Structures and Magnetic Properties of the p-N-Methypyridinium Nitronyl Nitroxide Cation Radical Salts, p-MPYNN・I and p-MPYNN. ClO_4
• Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In_Ga_P Grown on Si SubStrate : Semiconductors
• Electrical Characteristics of GaAs Bonded to Si Using SeS_2 Technique
• Hydrogen Plasma Passivation and Improvement of the Photovoltaic Properties of a GaAs Solar Cell Grown on Si Substrate
• New Types of Photochemical Switching Phenomena in Langmuir-Blodgett Films
• Ion Beam Induced Effects in RF Plasma Chemical Vapor Deposition Deposited Hydrogenated Amorphous Carbon Thin Films
• Improvement in Field Electron Emission Performance of Natural-Precursor-Grown Carbon Nanofibers by Thermal Annealing in Argon Atmosphere
• Simultaneous Formation of Both Single- and Multi-Wall Carbon Nanotubes by Ultrasonic Spray Pyrolysis
• Two-Dimensional Growth of GaP on Si Substrates under High V/III Ratio by Metal Organic Vapor Phase Epitaxy
• Alkali-Metal Doping of Langmuir-Blodgett Films of C_ Studied by ESR
• Flow Orientation in Langmuir-Blodgett Films of a Charge-Transfer Complex (TMTTF)_3(C_TCNQ)_2
• Initial Growth Mechanism for GaAs and GaP on Si Substrate by Metalorganic Chemical Vapor Deposition
• High-Radiation Resistance of GaAs Solar Cell on Si Substrate Following 1 MeV Electron Irradiation
• Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS_2Treatment
• Photovoltaic Properties of Bulk Heterojunction Organic Solar Cell Composed of Coumarin 6 Dye as Light Harvester and Donor Material
• Quasi One-Dimensional Spin System in Langmuir-Blodgett Films of a Charge-Transfer Complex
• Control of In-Plane Orientation of Merocyanine Dye in Mixed Langmuir-Blodgett Films Using Salt Formation with Matrix
• Improvement of GaAs Metal-Semiconductor Field-Effect Transistors Characteristics on SiO_2 Back-Coated Si Substrate by Metalorganic Chemical Vapor Deposition
• Structure and Electronic Transport of Highly Conductive Langmuir-Blodgett Films of Tridecylmethylammonium-Au(dmit)_2
• Electrical Conductivity and Thermoelectric Power of Langmuir-Blodgett Films of Tridecylmethylammonium-Au(dmit)_2
• ESR Study on Langmuir-Blodgett Films of Azobenzene-Containing Alkylpyridinium-Tetracyanoquinodimethane 1:2 Complexes

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