Initial Growth Mechanism for GaAs and GaP on Si Substrate by Metalorganic Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• The initial stage of epitaxial growth of GaAs and GaP on Si substrates by atmospheric-pressure metalorganic chemical vapor deposition was investigated. GaP tends to grow three-dimensionally and the GaP island is faceted by a (111)-type plane. The island density of GaP increases with increasing V/III ratio and the growth mode changes from three-dimensional to two-dimensional. On the other hand, the island density does not depend on the V/III ratio in the case of GaAs on Si. The island formation mechanisms based on the experimental results are described.

• 社団法人応用物理学会の論文
• 1991-12-15

著者

• SOGA Tetsuo

  Department of Frontier Materials, Nagoya Institute of Technology

• UMENO Masayoshi

  Department of electrical and Computer Engineering, Nagoya Institute of Technology

• JIMBO Takashi

  Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology

• Umeno Masayoshi

  Department Of Electric And Computer Engineering Nagoya Institute Of Technology

• Soga T

  Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology

• Soga Tetsuo

  Department Of Electronics Faculty Of Engineering Nagoya University

• George Thomas

  Departments Of Chemistry And Physics Washington State University Pullman

• George Thomas

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology:jet Propulsion Labo

• Jimbo Takashi

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Soga T

  Nagoya Inst. Technol. Nagoya Jpn

• George Thomas

  Department of Chemistry and Physics & Astronomy

• Soga Tetsuo

  Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466

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