Growth of cupric oxide nanostructure by thermal oxidation of copper (電子デバイス)
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概要
- 論文の詳細を見る
CuO nanostructures have been synthesized by direct heating a Cu sheet on a hotplate in an ambient condition. The copper foil samples were oxidized in air between 400 to 800℃. By changing the growth temperature the ID nanostructures were obtained with different diameter. The oxide films grown were then investigated by means of X-ray diffraction (XRD) and Scanning Electron Microscope (SEM).
- 社団法人電子情報通信学会の論文
- 2008-05-08
著者
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SOGA Tetsuo
Department of Frontier Materials, Nagoya Institute of Technology
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Uma Kasimayan
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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JIMBO Takashi
Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology
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Jimbo T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Jimbo Takashi
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology:research Ce
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Soga Tetsuo
Department Of Electronics Faculty Of Engineering Nagoya University
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Jimbo Takashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Liang Jian-Bo
Department of Environment Technology and Urban Planning Nagoya Institute of Technology
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Soga Tetsuo
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Jimbo T
Ulvac Inc. Shizuoka Jpn
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Shirata T.
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Jimbo Takashi
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Soga Tetsuo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466
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