GaAs/AlGaAs Single Quantum Well Optical Switch Fabricated on Si Substrate
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概要
- 論文の詳細を見る
We report a single-mode waveguide-type optical switch with a double hetero (DH)-structure fabricated on a Si substrate by Metalorganic Chemical Vapor Deposition (MOCVD). This switch utilizes the quantum confined Stark effect (QCSE). The sample consists of an Al_<0.3>Ga_<0.7>As cladding layers and Al_<0.25>Ga_<0.75>As guiding layer with an 8.3-nm-wide GaAs single quantum well (SQW). To measure the light absorption under reverse bias, the photocurrent method was applied out using a cw Ti:sapphire laser. We measured about a 10 nm shift of the absorption edge at 8 V. This switch exhibits a 33.1 dB/mm extinction ratio at 867 nm wavelength under -8 V bias.
- 社団法人応用物理学会の論文
- 1993-08-01
著者
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YUASA Takayuki
Department of Physics, School of Science, The University of Tokyo
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UMENO Masayoshi
Department of electrical and Computer Engineering, Nagoya Institute of Technology
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JIMBO Takashi
Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Jimbo Takashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Yuasa T
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Murase Tutomu
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Yuasa Takayuki
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Nagashima Yoshikazu
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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