InGaAsP/InP Wavelength Division Solar Cells : II-3: NEW STRUCTURE AND ADVANCED MATERIAL SOLAR CELLS
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1981-06-01
著者
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UMENO Masayoshi
Department of electrical and Computer Engineering, Nagoya Institute of Technology
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Uesugi Tsutomu
Department Of Electronics Faculty Of Engineering Nagoya Institute Of Technology
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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HATTORI Shuzo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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ITO Nobuyuki
Department of Electronics, Faculty of Engineering Nagoya University
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SAKAl Shiro
Department of Engineering Science, Nagoya Institute of Technology
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Sakal Shiro
Department Of Engineering Science Nagoya Institute Of Technology
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Hattori Shuzo
Department Of Engineering Science Nagoya University
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Ito Nobuyuki
Department Of Electronics Faculty Of Engineering Nagoya University
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Ito Nobuyuki
Department of Chemistry, Faculty of Science, Kumamoto University
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- Effect of Radio Frequency Power on the Properties of Hydrogenated Amorphous Carbon Films Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition
- Theoretical Studies on Hole Transport and the Effective Hall Factor in Cubic Phase of p-Type GaN
- Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
- Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers
- Emission Properties of Electrodeless Argon Gas Discharge in VUV Region
- Vacuum Ultraviolet Light Source Using Electrodeless Discharge
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- Annealing Temperature Effects on Synthesis of n-TiO_2/dye/p-CuI Solid-State Solar Cells
- The Deposition of a-C : H Films by Pulsed Laser Ablation
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- Crosshatch Pattern on InGaAsP Layers Grown on GaAs_P_ Substrate by LPE
- Meltback of GaAs_P_ Substrate in LPE Growth of InGaAsP
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