Two-Dimensional Growth of GaP on Si Substrates under High V/III Ratio by Metal Organic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
Direct heteroepitaxial growth of GaP layers on Si substrates by metal organic vapor phase epitaxy (MOVPE) has been studied. The effects of growth temperature and the V/III ratio on the layers were investigated. Hillocks appeared when the growth temperature was lower than 850℃. It was clarified that the growth is two-dimensional when the V/III ratio is higher than 600. Once the two-dimensional growth is realized at the initial stage, the subsequent growth is easily attained under the condition of low V/III ratios. The crosshatch pattern was observed on the surface. The EBIC plan images show the dark lines corresponding to crosshatches and dark spots. The dark spot density (DSD) is less than 3×10^5 cm^<-2>.
- 社団法人応用物理学会の論文
- 1991-03-15
著者
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Saka Takashi
Electrical And Electronics Engineering Daido Institute Of Technology
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Saka Takashi
New Materials Research Laboratory Daido Steel Co. Ltd.
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SOGA Tetsuo
Department of Frontier Materials, Nagoya Institute of Technology
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UMENO Masayoshi
Department of electrical and Computer Engineering, Nagoya Institute of Technology
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JIMBO Takashi
Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Soga T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Soga Tetsuo
Department Of Electronics Faculty Of Engineering Nagoya University
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Jimbo Takashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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IMAIZUMI Mitsuru
apan Aerospace Exploration Agency
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Imaizumi M
National Space Development Agency Of Japan
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IMAIZUMI Mitsuru
New Materials Research Laboratory, Daido Steel Co. Ltd.
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Soga Tetsuo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466
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