Rectifying I-V Characteristics of n-Type Fluorine Implanted a-C/p-Type Si Heterojunction Diodes

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2004-01-15

著者

• SOGA Tetsuo

  Department of Frontier Materials, Nagoya Institute of Technology

• Narayanan K

  Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology

• Yamaguchi Masafumi

  Semiconductor Research Center Toyota Technological Institute

• NARAYANAN Kannan

  Department of Physical Electronics, Tokyo Institute of Technology

• EKINS-DAUKES Nicholas

  Semiconductor Research Center, Toyota Technological Institute

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