Rectifying I-V Characteristics of n-Type Fluorine Implanted a-C/p-Type Si Heterojunction Diodes
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概要
- 論文の詳細を見る
Heterojunction diodes are fabricated by fluorine ion implanted amorphous carbon (a-C: H) on p-type Si substrates. Various metallic contacts are formed on the fluorine implanted carbon side and copper contact is found to result in better a-C/p-Si heterojunction, and is found to be dose dependent. Formation of heterojunction diode confirms that the fluorine ion implanted a-C is n-type. Electrical resistivity is found to reduce with the ion dose and is attributed to the fluorine ions and ion beam induced localized heating effects. Raman scattering studies resulted in the formation of typical disorder D and graphitic G Raman bands in the implanted carbon films.
- Japan Society of Applied Physicsの論文
- 2004-01-15
著者
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Soga Tetsuo
Department Of Electronics Faculty Of Engineering Nagoya University
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Yamaguchi Masafumi
Semiconductor Research Center Toyota Technological Institute
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Narayanan Kannan
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology
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EKINS-DAUKES Nicholas
Semiconductor Research Center, Toyota Technological Institute
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Narayanan Kannan
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Yamaguchi Masafumi
Semiconductor Research Center, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan
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Soga Tetsuo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466
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