Fabrication of Microcrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cell by Hot Wire Chemical Vapor Deposition
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概要
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The n-type microcrystalline cubic silicon carbide (μc-3C–SiC:H) films were deposited by hot wire chemical vapor deposition (HWCVD) at a low substrate temperature (${\sim}300$ °C). Heterojunction silicon based photovoltaic devices were fabricated by depositing wide band gap n-type μc-3C–SiC thin films on p-type Si wafers, whose thickness and resistivity were 200 μm and 1–10 $\Omega$ cm, respectively. The silicon wafers were textured using alkaline etchant prior to the device fabrication. The photovoltaic parameters of a typical device were found to be $V_{\text{oc}}=560$ mV, $J_{\text{sc}}=35.0$ mA/cm2, fill factor (F.F.) = 0.724, and $\eta=14.20$%. Numerical analysis was performed using automat for simulation of hetero structures (AFORS-HET), a one-dimensional device simulators to determine the probable cause of the changes in device parameters before and after the ageing of the filament.
- 2007-01-15
著者
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Haga Keisuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Narayanan Kannan
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology
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Miyajima Shinsuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Banerjee Chandan
Department Of Physical Electronics Tokyo Institute Of Technology
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Sritharathikhun Jaran
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Yamada Akira
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Narayanan Kannan
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Konagai Makoto
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Banerjee Chandan
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yamada Akira
Quantum Nanoelectorics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Sritharathikhun Jaran
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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