Optimization of Amorphous Silicon Oxide Buffer Layer for High-Efficiency p-Type Hydrogenated Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells
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概要
- 論文の詳細を見る
Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H) films deposited by very high frequency plasma-enhanced chemical vapor deposition (60 MHz VHF-PECVD) at a low substrate temperature of approximately 200 °C were used as a front buffer layer in p-type hydrogenated microcrystalline silicon oxide/n-type crystalline silicon (p-μc-SiO:H/n-c-Si) heterojunction solar cells. We found that the oxygen concentration in the i-a-SiO:H buffer layer strongly affected the solar cell performance and that the short wavelength response in quantum efficiency (QE) was improved by oxygen addition. Employing a p-μc-SiO:H/i-a-SiO:H/n-Si [Czochralski (CZ), 200 μm, (100)]/i-a-Si:H/n-a-Si:H/Ag/Al configuration, we achieved an efficiency of 17.9% with $V_{\text{oc}}$ of 671 mV.
- 2008-11-25
著者
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Miyajima Shinsuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Sritharathikhun Jaran
Department Of Physical Electronics Tokyo Institute Of Technology
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Yamamoto Hiroshi
Departmemt Of Chemical Engineering University Of Tokyo
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Konagai Makoto
Photovoltaics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Konagai Makoto
Photovoltaic Research Center (PVREC), Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Miyajima Shinsuke
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yamada Akira
Photovoltaics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yamada Akira
Photovoltaics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9, O-okayama, Meguro, Tokyo 152-8552, Japan
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Sritharathikhun Jaran
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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