Surface Passivation of Crystalline and Polycrystalline Silicon Using Hydrogenated Amorphous Silicon Oxide Film
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概要
- 論文の詳細を見る
Excellent passivation properties of hydrogenated amorphous silicon oxide (a-SiOx:H) prepared by very high frequency plasma-enhanced chemical vapor deposition (VHF PECVD) at a low substrate temperature (170 °C) on crystalline and polycrystalline silicon (Si) wafers are reported. Films were characterized by ellipsometry, Fourier transform infrared spectroscopy (FTIR), ultraviolet–visible (UV–vis) spectrophotometry, and dark-conductivity and photoconductivity measurements. A comparison of the results with those for different passivation layers such as hydrogenated amorphous silicon carbon nitride (a-SiCxNy:H), hydrogenated amorphous silicon nitride (a-SiNx:H), and hydrogenated amorphous silicon (a-Si:H) reveals their superiority as an excellent passivation layer for p-type crystalline Si as well as polycrystalline Si. A maximum effective lifetime of 400 μs was measured for 1–10 $\Omega$ cm, 380-μm-thick p-type c-Si using a micro-photocurrent decay (μ-PCD) system. Fixed charge density ($Q_{\text{f}}$) was estimated by high-frequency (1 MHz) capacitance–voltage measurement using a metal–insulator–silicon structure (CV-MIS). The effect of annealing temperature on surface passivation in a nitrogen atmosphere was also studied.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-06-15
著者
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Otsubo Michio
Department Of Physical Electronics Tokyo Institute Of Technology
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Limmanee Amornrat
Department Of Physical Electronics Tokyo Institute Of Technology
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Banerjee Chandan
Department Of Physical Electronics Tokyo Institute Of Technology
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Sritharathikhun Jaran
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Sugiura Tsutomu
Department O Chemistry Aichi University Of Education
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Yamada Akira
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Yamamoto Hiroshi
Departmemt Of Chemical Engineering University Of Tokyo
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Sato Takehiko
Photovoltaic and Power Storage Group Department, Advanced Technology R&D Center, Mitsubishi Electric Corporation, Sagamihara, Kanagawa 229-1195, Japan
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Konagai Makoto
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yamada Akira
Quantum Nanoelectorics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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