Heavily B-Doped Epitaxial Si Films Grown by Photochemical Vapor Deposition at Very Low Temperature (<200℃)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-11-01
著者
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YAMADA Akira
Departments of Immunology, Kurume University School of Medicine
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KONAGAI Makoto
Department of Physical Electronics, Tokyo Institute of Technology
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ABE Katsuya
Department of Physical Electronics, Tokyo Institute of Technology
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Yamada Akira
Department Of Cardiology Aso-iizuka Hospital
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Abe Katsuya
Department Of Applied Chemistry Faculty Of Engineering Kogakuin University
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OSHIMA Takayuki
Department of Physical Electronics, Tokyo Institute of Technology O-okayama
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Oshima Takayuki
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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ABE Katsuya
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Oshima Takayuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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