Improvement in Aspect Ratio of P-GaAs Oxide Fabricated by Atomic Force Microscope (AFM)-Based Nanolithography Using Pulsed Voltage
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-06-01
著者
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YAMADA Akira
Departments of Immunology, Kurume University School of Medicine
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山田 明
東京工業大学大学院理工学研究科電子物理工学専攻
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KONAGAI Makoto
Department of Physical Electronics, Tokyo Institute of Technology
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KONAGAI Makoto
Tokyo Institute of Technology
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MATSUZAKI Yuichi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Konagai M
Tokyo Inst. Technol. Tokyo Jpn
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HASUI Shigeki
Department of Physical Electronics, Tokyo Institute of Technology
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KAMADA Shin-ya
Department of Physical Electronics, Tokyo Institute of Technology
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Konagai Makoto
Department Of Electrical And Electronic Engineering. Tokyo Institute Of Technology
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Matsuzaki Y
Mie Univ. Tsu Jpn
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Konagai M
Department Of Physical Electronics Tokyo Institute Of Technology
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Hasui Shigeki
Department Of Physical Electronics Tokyo Institute Of Technology
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